SGS Thomson Microelectronics BUL810 Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMSONPREFERRED SALESTYPE
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMICPARAMETERS
■ LOW BASE-DRIVEREQUIREMENTS
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERIZED AT 125
APPLICATIONS
■ ELECTRONICTRANSFORMER FOR
HALOGENLAMPS
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ SWITCHMODEPOWERSUPPLIES
DESCRIPTION
The BUL810 is manufacturedusing high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structureto enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
o
C
BUL810
NPN POWER TRANSISTOR
3
2
1
TO-218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
March 1998
Collector-Emitter Voltage (VBE= 0) 1000 V
CES
Collector-Emitter Voltage (IB= 0) 450 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 15 A
I
C
Collect or Peak Current ( tp<5ms) 22 A
CM
Base Current 5 A
I
B
Base Peak Current (tp<5ms) 10 A
BM
Total Dissipat ion at Tc=25oC 125 W
tot
Stora ge T emperature -65 to 150
stg
Max. Oper at i ng Juncti on Temperatu re 150
T
j
o
C
o
C
1/6
BUL810
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Junctio n- Case Max
Thermal Resistance Junction-Ambient Max
30
1
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector Cut-off
Current (V
BE
=0)
Collector Cut-off
Current (I
B
=0)
Collector-Em it t er
=1000V
V
CE
V
=1000V Tj= 125oC
CE
V
=450V 250 µA
CE
100
500
IC= 100 mA L = 25 m H 450 V
Sust aining Voltage
V
V
CE(sat)
EBO
Emitt er-Base V oltage
=0)
(I
C
∗ Collector-Em it t er
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urr ent Gain IC=5A VCE=5V
FE
INDUCTIV E LOAD
t
s
t
f
St orage Time
Fall T ime
INDUCTIV E LOAD
t
∗
Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
s
t
f
St orage Time
Fall T ime
I
=10mA 9 V
E
IC=5A IB=1A
=8A IB=1.6A
I
C
=12A IB=2.4A
I
C
IC=5A IB=1A
=8A IB=1.6A
I
C
=10mA VCE=5V
I
C
10
10
1
1.5
5
1.3
1.6
40
IC=8A IB1=1.6A
V
V
=-5V RBB=0.4Ω
BE(off )
= 350 V L = 200 µ H
CL
1.5
55
2.3
110
IC=8A IB1=1.6 A
V
V
T
=-5V RBB=0.4Ω
BE(off )
= 350 V L = 200 µ H
CL
= 100oC
j
1.9
80
µA
µA
V
V
V
V
V
µs
ns
µs
ns
Safe Operating Areas Derating Curve
2/6
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