SGS Thomson Microelectronics BUL654 Datasheet
®
HIGH VOLTAGE FAST-SWITCHING
■ HIGH VOLTAGE CAPABILITY
■ MINIMUM LOT- TO- LO T SPR E AD FO R
RELIABLE OPERATION
■ LOW BASE-DRIVE REQUIREMENTS
■ VERY H IGH SWI TCHING SPEED
■ FULLY CHARACTERIZED AT 125
APPLICATIONS
■ ELECTRONIC TRANSFORMER FOR
HALOGEN LAM PS
■ SWITCH MODE P OW ER SUP P LIE S
o
C
BUL654
NPN POW ER TRANSISTOR
PRELIMINARY DATA
3
2
1
DESCRIPTION
TO-220
The BUL654 is manufactured using high voltage
Multi Epitaxial Planar technology for cost-effectiv e
high performance. It uses a Hollow Emitter
structure to enhance switchi ng speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
INTERNAL SCHEMATIC DIAGRAM
supplies.
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = 0) 700 V
CES
Collector-Emitter Voltage (IB = 0) 400 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
Collector Current 12 A
I
C
Collector Peak Current (tp < 5 ms) 18 A
CM
Base Current 6 A
I
B
Base Peak Current (tp < 5 ms) 9 A
BM
Total Dissipation at Tc = 25 oC80W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
February 2003
1/4
BUL654
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case Max 1.25
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
= 0)
B
∗ Collector-Emitter
= 700 V
V
CE
V
= 700 V Tc = 125 oC
CE
= 400 V 100 µA
V
CE
= 100 mA L = 25 mH 400 V
I
C
50
500
Sustaining Voltage
(I
= 0)
B
V
V
CE(sat)
EBO
Emitter-Base Voltage
(I
= 0)
C
∗ Collector-Emitter
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 10 mA VCE = 2 V
FE
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
= 10 mA 9 V
I
E
IC = 2 A IB = 0.4 A
I
= 7 A IB = 1.4 A
C
IC = 2 A IB = 0.4 A
I
= 7 A IB = 1.4 A
C
0.15
0.35
0.85
1
0.3
0.7
1
1.2
15
I
= 2 A VCE = 2 V
C
I
= 6 A VCE = 2 V
C
I
= 12 A VCE = 5 V
C
15
7
4
µA
µA
V
V
V
V
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