SGS Thomson Microelectronics BUL58D Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMICPARAMETERS
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ LOW BASE-DRIVEREQUIREMENTS
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERISEDAT 125
■ HIGH RUGGEDNESS
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTERDIODE
APPLICATIONS
■ ELECTRONICTRANSFORMERS FOR
HALOGENLAMPS
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ SWITCHMODE POWER SUPPLIES
o
C
BUL58D
NPN POWER TRANSISTOR
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
The BUL58D is manufactured using high voltage
Multi Epitaxial Planar technology to enhance
switching speeds while maintaining a wide
RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE= 0) 800 V
CES
Collector-Emitter Voltage (IB= 0) 450 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 8 A
I
C
Collect or Peak Current (tp<5ms) 16 A
CM
Base Current 4 A
I
B
Base Peak Cur rent (tp<5ms) 8 A
BM
Total Diss ipat i on at Tc=25oC85W
tot
Stora ge T emperature -65 to 150
stg
Max. Op erat ing Junction T em per at u r e 150
T
j
o
C
o
C
September 1997
1/6
BUL58D
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Ju nct io n- Case Max
Thermal Resistance Junction-Ambient Max
1.47
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector C ut -off
Current (V
BE
=0)
Collector C ut -off
Current (I
B
=0)
Collector-Emit t er
=800V
V
CE
V
=800V Tj=125oC
CEO
V
=450V 200 µA
CE
200
500
IC= 100 mA L = 25 mH 450 V
Sust aining V olt ag e
V
V
CE(sat)
EBO
Emitt er-Base V oltage
=0)
(I
C
∗ Co llector-Em itt er
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urr ent Gain IC=5A VCE=5V
FE
INDUCTIVE LOAD
t
s
t
f
St orage Time
Fall T ime
INDUCTIVE LOAD
t
V
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
St orage Time
s
t
Fall T ime
f
Diode Forward V oltage IC=3A 3 V
f
I
=10mA 9 V
E
IC=4A IB=0.8A
=5A IB=1A
I
C
IC=4A IB=0.8A
I
=5A IB=1A
C
1.5
2
1.3
1.5
5
=500mA VCE=5V
I
C
38
IC=2A IB1=0.4A
V
V
=-5V RBB=0Ω
BE(off)
= 250 V L = 200 µ H
CL
90
1
1.8
180
IC=2A IB1=0.4A
V
V
T
=-5V RBB=0Ω
BE(off)
= 250 V L = 200 µ H
CL
= 125oC
j
1.5
180
µA
µA
V
V
V
V
µs
ns
µs
ns
Safe Operating Areas Derating Curve
2/6
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