SGS Thomson Microelectronics BUL57 Datasheet
BUL57
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronicsPREFERRED
SALESTYPES
■ NPNTRANSISTORS
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMIC PARAMETERS
■ MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERIZED AT 125
■ LARGERBSOA
■ TO-220FPFULLYISOLATEDPACKAGE
(U.L. COMPLIANT)
APPLICATIONS:
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ SWITCHMODEPOWER SUPPLIES
o
C
BUL57FP
NPN POWER TRANSISTORS
3
2
1
TO-220 TO-220FP
3
2
1
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
The devices are manufacturedusing high voltage
Multi Epitaxial Planar technology for high
switchingspeeds and medium voltage capability.
They use a Cellular Emitter structure with planar
edge terminationto enhance switching speeds.
The devices are designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BUL57 BUL57FP
V
V
V
I
I
P
T
Collect or-Emit t e r V oltage (VBE= 0 ) 700 V
CES
Collect or-Emit t e r V oltage (IB= 0 ) 400 V
CEO
Emitter-Base Voltag e (IC=0) 9 V
EBO
I
Collect or Current 8 A
C
Collect or Peak Cur rent (tp<5ms) 16 A
CM
I
Base Current 4 A
B
Base P eak Cu rrent (tp<5ms) 7 A
BM
Tot al Dissipa t io n at Tc=25oC8535W
tot
Storage Temperature -65 to 150
stg
T
Max. Oper ating Junct io n T e m pe r ature 150
j
o
C
o
C
January 1999
1/7
BUL57 / BUL57FP
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistanc e J unction-C as e Max
Ther mal Resistanc e J unction-Am b ient Max
TO-220 TO-220FP
1.47
62.5
3.5
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collec t or Cut -off
Current (V
BE
=0)
Collec t or Cut -off
Current (I
B
=0)
Collec t or -Emitt er
V
=700V
CE
=700V Tj=125oC
V
CE
V
= 400 V 250 µA
EC
100
500
IC= 100 m A L = 25 mH 400 V
Sust aining Voltage
V
V
CE(sat)
EBO
Emitter-Base Voltage
=0)
(I
C
∗ Collector-E mitter
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC Current Ga in IC=2A VCE=5V
FE
INDUCTIV E LO AD
t
s
t
f
Storage Time
Fall Time
INDUCTIV E LO AD
t
s
t
f
Storage Time
Fall Time
INDUCTIV E LO AD
t
s
t
f
Storage Time
Fall Time
INDUCTIV E LO AD
t
s
t
f
Storage Time
Fall Time
RESI STIVE LOAD
s
t
f
Storage Time
Fall Time
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
I
=10mA 9 V
E
IC=2A IB=0.4A
=3A IB=0.6A
I
C
=4A IB=0.8A
I
C
=5A IB=1A
I
C
=8A IB=2A 2
I
C
IC=2A IB=0.4A
=5A IB=1A
I
C
15
=4A VCE=5V
I
C
=10mA VCE=5V
I
C
6
8
0.65
0.75
1.2
2
1.2
1.6
40
IC=3A VCL=250V
=0.6A IB2=-1.2A
I
B1
L=200µH
1.8
60
2.6
110
IC=3A VCL=250V
=0.6A IB2=-1.2A
I
B1
L=200µHT
=125oC
j
2.6
110
IC=3A IB1=0.6A
V
V
=-5V RBB=0Ω
BE(off )
=250V L=200µH
CL
1
54
1.6
100
IC=3A IB1=0.6A
V
V
T
=-5V RBB=0Ω
BE(off )
=250V L=200µH
CL
=125oC
j
1.5
90
VCC=300V IC=2A
=0.4A IB2=-0.4A
I
B1
Tp = 30 µ s
34.2
350
µA
µA
V
V
V
V
V
V
V
µs
ns
µs
ns
µs
ns
µs
ns
ms
ns
2/7
BUL57 / BUL57FP
Safe Operating Areas
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitterSaturationVoltage
BaseEmitterSaturation Voltage
3/7
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