SGS Thomson Microelectronics BUL49D Datasheet



HIGH VOLTAGE FAST-SWITCHING

■ NPNTRANSISTOR

■ HIGH VOLTAGECAPABILITY

■ LOW SPREADOF DYNAMIC PARAMETERS

■ MINIMUMLOT-TO-LOT SPREADFOR

RELIABLEOPERATION

■ VERYHIGH SWITCHINGSPEED

■ HIGH RUGGEDNESS

BUL49D

NPN POWER TRANSISTOR

APPLICATIONS

■ ELECTRONICTRANSFORMERS FOR

HALOGENLAMPS

■ FLYBACKANDFORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

TO-220

3

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1

DESCRIPTION

The BUL49D is manufactured using high voltage
Multi Epitaxial Planar technology for high
switchingspeeds and medium voltage capability.

The BUL49D is designed for use in electronic

INTERNAL SCHEMATIC DIAGRAM

transformersfor halogen lamps.

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val u e Uni t

V
V
V

I

I
P

T

Collector-Emitter Voltage ( VBE= 0) 850 V

CES

Collector-Emitter Voltage ( IB= 0) 450 V

CEO

Emitter-Base Voltage

EBO

=0, IB<2.5A, tp<10µs, TJ<150oC)

(I

C

Collect or Current 5 A

I

C

Collect or Peak Current ( tp<5ms) 10 A

CM

Base Current 2 A

I

B

Base Peak Current (tp<5ms) 4 A

BM

Tot al Di s sipation at T c = 25oC80W

tot

Storage Temperature -65 to 150

stg

Max. O perating Junct ion Tem per at u re 150

T

j

BV

EBO

V

o

C

o

C

June 2000

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BUL49D

THERMAL DATA

R

thj-case

R

thj- amb

Ther mal Resistance Junct ion-Case Max
Thermal Resistance Junction-Ambient Max

1.56

62.5

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwisespecified)

case

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

BV

I

I

CES

EBO

EBO

Collector C ut -off
Current (V

BE

=0)

Emit ter Cut -o f f C urr ent
(I

=0)

C

Emitt er-Base

V

=850V

CE

=850V Tj=125oC

V

CE

=9V 100 µA

V

EB

I

=10mA 10 18 V

E

100
500

Break dow n Volt age

=0)

(I

C

V

CEO(sus)

∗ Co llec tor-Emitt er

I

=10mA L=25mH 450 V

C

Sust aining Volt age

=0)

(I

B

V

∗ Collector-E mitter

CE(sat)

Saturation Voltage

V

∗ Base-Emitt er

BE(sat )

Saturation Voltage

h

∗ DC C urr ent Gain IC=10mA VCE=5V

FE

V

CEW

Maximum Collector
Emit ter Voltage
Wit hout Snubber

RESI STIVE LO AD

s

t

f

St orage Time
Fall T ime

t

INDUCTIVE LO A D

t

V

∗

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

St orage Time

s

t

Fall T ime

f

Diode Forward Voltage IC=3A 1.5 V

f

IC=1A IB=0.2A

=2A IB=0.4A

I

C

=4A IB=0.8A

I

C

IC=1A IB=0.2A

=4A IB=0.8A

I

C

=0.5A VCE=5V

I

C

=7A VCE=10V

I

C

=8A RBB=0Ω

I

C

=-2.5V L=50µH

V

BB

=10µs

t

p

IC=2A VCC= 250 V
I

B(on)=IB(off)

IC=4A I
V

V

=-5V RBB=0Ω

BE(of f )

= 300 V L = 1 mH

CL

10

4

450 V

=0.4A 2 3

=0.8A

B(on)

0.1 0.3

0.6

1.2

1.0

1.3

60
10

0.8

0.6
50

1.3

100

µA
µA

V
V
V

V
V

µs
µs

µs

ns

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