SGS Thomson Microelectronics BUL382, BUL381 Datasheet
BUL381
HIGH VOLTAGE FAST-SWITCHING
■ STMPREFERRED SALESTYPES
■ HIGH VOLTAGECAPABILITY
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERISEDAT 125
APPLICATIONS
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ SWITCHMODEPOWERSUPPLIES
DESCRIPTION
The BUL381 and BUL382 manufactured using
high voltage Multiepitaxial Mesa technology for
cost-effective high performance. They use a
Hollow Emitter structure to enhance switching
speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
o
C
BUL382
NPN POWER TRANSISTOR
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
June 1998
Collector-Emitter Voltage (VBE= 0) 800 V
CES
Collector-Emitter Voltage (IB= 0) 400 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 5 A
I
C
Collect or Peak Current (tp<5ms) 8 A
CM
Base Current 2 A
I
B
Base Peak Current (tp<5ms) 4 A
BM
Total Dissipat ion at Tc=25oC70W
tot
Stora ge T emperature -65 to 150
stg
Max. Oper at i ng Junction T emperatur e 150
T
j
o
C
o
C
1/7
BUL381/ BUL382
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Ju nc t io n- Case Max
Thermal Resistance Junction-Ambient Max
1.78
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector Cut-off
Current (V
BE
=0)
Collector Cut-off
Current (I
B
=0)
Collector-Em it t er
=800V
V
CE
V
=800V Tj=125oC
CE
V
=400V 250 µA
CE
100
500
IC= 100 mA L = 25 mH 400 V
Sust aining Voltage
V
V
CE(sat)
EBO
Emitt er-Base V oltage
=0)
(I
C
∗ Collector-Em it t er
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urr ent Gain IC=2A VCE=5V
FE
RESI STIVE LO AD
t
ON
t
s
t
f
Turn-on Time
St orage Time
Fall T ime
RESI STIVE LO AD
t
ON
t
s
t
f
Turn-on Time
St orage Time
Fall T ime
INDUCTIV E LOAD
t
s
t
f
St orage Time
Fall T ime
INDUCTIV E LOAD
t
∗
Pulsed: Pulse duration = 300 µs,duty cycle1.5 %
s
t
f
St orage Time
Fall T ime
I
=10mA 9 V
E
IC=1A IB=0.2A
=2A IB=0.4A
I
C
=3A IB=0.8A
I
C
IC=1A IB=0.2A
=2A IB=0.4A
I
C
0.5
0.7
1.1
1.1
1.2
8
=10mA VCE=5V
I
C
10
VCC=250 V IC=2A
I
=0.4A IB2=-0.4A
B1
(f or B UL 381only)
=30µs
t
p
1.4
1
2.2
800
VCC=250 V IC=2A
=0.4A IB2=-0.4A
I
B1
(f or B UL 382 only)
=30µs
t
p
1.7
1
2.5
800
IC=2A VCL= 250 V
=0.4A IB2=-0.8A
I
B1
L = 200 µH
1.7
75
2.6
120
IC=2A VCL= 250 V
=0.4A IB2=-0.8A
I
B1
L = 200 µHT
= 125oC
j
2.6
150
µA
µA
V
V
V
V
V
µs
µs
ns
µs
µs
ns
µs
ns
µs
ns
2/7
BUL381 / BUL382
Safe Operating Areas
DCCurrent Gain
DeratingCurves
DC Current Gain
CollectorEmitterSaturationVoltage
BaseEmitterSaturationVoltage
3/7
Loading...