HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMSONPREFERRED SALESTYPES
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMICPARAMETERS
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
■ LARGERBSOA
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTERDIODE
APPLICATIONS
■ ELECTRONICTRANSFORMERS FOR
HALOGENLAMPS
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ SWITCHMODE POWER SUPPLIES
BUL381D
BUL382D
NPN POWER TRANSISTORS
3
2
1
TO-220
DESCRIPTION
The BUL381D and BUL382D are manufactured
INTERNAL SCHEMATIC DIAGRAM
using high voltage Multi Epitaxial Planar
technology for high switching speeds and high
voltage capability.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE= 0) 800 V
CES
Collector-Emitter Voltage (IB= 0) 400 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 5 A
I
C
Collect or Peak Current ( tp<5ms) 8 A
CM
Base Current 2 A
I
B
Base Peak Current (tp<5ms) 4 A
BM
Total Dissipat ion at Tc=25oC70W
tot
Stora ge T emper at u re -65 to 150
stg
Max. Oper at i ng Junction Temperature 150
T
j
o
C
o
C
July 1997
1/6
BUL381D / BUL382D
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Ju nc t io n-Cas e Max
Thermal Resistance Junction-Ambient Max
1.78
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector C ut -off
Current (V
BE
=0)
Collector C ut -off
Current (I
B
=0)
Collector-Emit t er
=800V
V
CE
V
=800V Tj=125oC
CE
V
=400V 250 µA
CE
100
500
IC= 100 mA L = 25 m H 400 V
Sust aining V olt ag e
V
V
CE(sat)
EBO
Emitt er-Base V oltage
=0)
(I
C
∗ Collector-Emit t er
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urr ent Gain IC=2A VCE=5V
FE
RESI STIVE LO AD
t
t
s
s
t
f
St orage Time
St orage Time
Fall T ime
INDUCTIVE LOAD
t
V
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
St orage Time
s
t
Fall T ime
f
Diode Forward Voltage IC=2A 2.5 V
f
I
=10mA 9 V
E
IC=1A IB=0.2A
=2A IB=0.4A
I
C
=3A IB=0.75A
I
C
IC=1A IB=0.2A
=2A IB=0.4A
I
C
0.5
0.7
1.1
1.1
1.2
8
=10mA VCE=5V
I
C
10
IC=2A VCC= 250 V tp=30µs
I
=0.4A IB2=-0.4V
B1
for B UL 3 81D
for B UL 3 82D
for all
1.5
2
2.5
3
0.8
IC=2A IB1=0.4A
V
V
T
=-5V RBB=0Ω
BE(off)
= 250 V L = 200 µH
CL
= 125oC
j
1.3
100
µA
µA
V
V
V
V
V
µs
µs
µs
µs
µs
Safe Operating Areas Derating Curve
2/6
BUL381D/ BUL382D
DCCurrent Gain
CollectorEmitter SaturationVoltage
DC Current Gain
BaseEmitter Saturation Voltage
InductiveFall Time
InductiveStorage Time
3/6
BUL381D / BUL382D
ReverseBiased SOA
ResistiveLoad Switching TestCiurcuit RBSOAand InductiveLoad SwitchingTest
Circuits
1) F ast e lectronic switch
2) Non-induct iv e Resistor
4/6
1) Fast e lect ronic s wit c h
2) N on- inductive Resis tor
3) F ast recovery rectifier
TO-220 MECHANICAL DATA
BUL381D/ BUL382D
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
C
D1
L2
Dia.
L5
L7
L6
L9
P011C
5/6
BUL381D / BUL382D
Informationfurnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such information nor for any infringementof patents or other rights of third parties which may results fromits use.No
license is granted byimplicationor otherwiseunder anypatentor patentrights ofSGS-THOMSONMicroelectronics.Specificationsmentioned
in thispublication are subject to change without notice. This publicationsupersedesand replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedfor use ascritical componentsin lifesupportdevices or systemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia- Brazil - Canada- China- France- Germany- Hong Kong - Italy - Japan- Korea -Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom- U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
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