SGS Thomson Microelectronics BUL312FH Datasheet
HIGH VOLTAGE FAST-SWITCHING
Ordering Code Marking Shipment
BUL312FH BUL312FH Tube
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAM ETE R S
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125 °C
LARGE R.B.S.O.A.
FULLY INSULATED PAC KAG E ( U .L .
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS:
HORIZONTAL DEFLECTION FOR COLOR TV
SWITCH MODE POWER SUPPLI ES
ELECTRONIC BALLASTS FOR
FLUORE S C ENT LIGHTIN G
BUL312FH
NPN POWER TRANSISTOR
TO-220FH
INTERNAL SCHEMATIC DIAGRAM
DESC RI PTIO N
The device is manufactured us ing High Voltage
Multi Epitaxial Planar technology for h igh switching
speeds and high voltage capability.
It uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide R.B.S.O.A.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
CEO
V
EBO
I
I
CM
I
I
BM
P
V
isol
T
stg
T
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current 5 A
C
Collector Peak Current (tp < 5 ms)
Base Current 3 A
B
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 °C
tot
Insulation Withstand Voltage (RMS) from All Three
Leads to External Heatsink
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
j
1150 V
500 V
9V
10 A
4A
36 W
2500 V
1/6August 2002
BUL312FH
THERMA L D ATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-c ase
Thermal Resistance Junction-a mbie nt
Max
Max
3.47
62.5
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
j
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
V
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
= 0)
B
Emitter-Base Voltage
= 0)
(I
C
* Collector-Emitter
= 1150 V
V
CE
V
= 1150 V
CE
V
= 500 V 250 µA
CE
I
= 10 mA 9 V
E
I
= 100 mA 500 V
C
= 125 °C
T
j
1
2
Sustaining Voltage
= 0)
(I
B
V
* Collector-Emitter
CE(sat)
Saturation Voltage
* Base-Emitter
V
BE(sat)
Saturation Voltage
* DC Current Gain IC = 10 mA
h
FE
INDUCTIVE LOAD
t
t
Storage Time
s
Fall Time
f
IC = 1 A
I
= 2 A
C
I
= 3 A
C
IC = 1 A
I
= 2 A
C
I
= 3 A
C
I
= 3 A
C
IC = 2 A
I
= 400 mA
B1
L = 200 µH
= 200 mA
I
B
I
= 400 mA
B
I
= 600 mA
B
= 200 mA
I
B
I
= 400 mA
B
I
= 600 mA
B
= 5 V
V
CE
V
= 2.5 V
CE
= 250 V
V
clamp
V
BE(off)
R
= 0
BB
= -5 V
0.5
0.7
1.1
1
1.1
1.2
8
816
1.2
80
1.9
160µsns
(See Figure 1)
INDUCTIVE LOAD
s
f
Storage Time
Fall Time
t
t
* Pulsed: Pu lse duration = 300 µs, dut y c ycle = 1.5 %.
IC = 2 A
I
= 400 mA
B1
L = 200 µH
T
= 125 °C
j
= 250 V
V
clamp
V
= -5 V
BE(off)
R
= 0
BB
(See Figure 1)
1.8
150
mA
mA
V
V
V
V
V
V
µs
ns
2/6
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