SGS Thomson Microelectronics BUL310PI, BUL310 Datasheet

HIGH VOLTAGE FAST-SWITCHING

■ SGS-THOMSONPREFERRED SALESTYPES

■ NPNTRANSISTOR

■ HIGH VOLTAGECAPABILITY

■ LOW SPREADOF DYNAMICPARAMETERS

■ MINIMUMLOT-TO-LOT SPREADFOR

RELIABLEOPERATION

■ VERYHIGH SWITCHINGSPEED

■ FULLYCHARACTERISEDAT 125

■ LARGERBSOA

■ U.L.RECOGNISED ISOWATT220PACKAGE

(U.L. FILE # E81734(N)):
ISOLATIONVOLTAGE1500V

APPLICATIONS

■ ELECTRONICBALLASTSFOR

FLUORESCENT LIGHTING

■ FLYBACKAND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

DESCRIPTION

The BUL310 and BUL310PI are manufactured
using high voltage Multi Epitaxial Planar
technology for high switching speeds and high
voltage capability. They use a Cellular Emitter
structurewith planar edge terminationto enhance
switching speeds while maintaining a wide
RBSOA.

The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.

RMS

o

C

BUL310

BUL310PI

NPN POWER TRANSISTORS

3

2

1

TO-220 ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val u e Uni t

BUL310 BUL310PI

V
V
V

I

I
P

T

September 1997

Collector-Emitter Voltage ( VBE= 0) 1000 V

CES

Collector-Emitter Voltage ( IB= 0) 500 V

CEO

Emitter-Base Voltage ( IC=0) 9 V

EBO

Collect or Current 5 V

I

C

Collect or Peak Current (tp<5 ms) 10 A

CM

Base Current 3 A

I

B

Base Peak Curr ent (tp<5 ms) 4 A

BM

Tot al Dissipation at T c = 25oC7535W

tot

Storage Temperature -65 to 1 50

stg

Max. O per ating Junct ion T emperature 150

T

j

o

C

o

C

1/7

BUL310/PI

THERMAL DATA

R

thj-case

R

thj-amb

Ther mal Resistance Ju nc t io n-Cas e Max
Thermal Resistance Junction-Ambient Max

TO - 220 IS O WATT220

1.65

62.5

3.58

62.5

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

I

CES

I

CEO

V

CEO(sus)

Collector C ut -off
Current (V

BE

=0)

Collector C ut -off
Current (I

B

=0)

Collector-Emit t er

V

=1000V

CE

=1000V Tj= 125oC

V

CE

=400V 250 µA

V

EC

100
500

IC= 100 mA L= 25 mH 500 V

Sust aining V olt ag e

V

V

CE(sat)

EBO

Emitt er-Base V oltage

=0)

(I

C

∗ Co llector-Em itt er

Saturation Voltage

V

∗ Base-Emitt er

BE(sat)

Saturation Voltage

h

∗ DC C urr ent Gain IC=10mA VCE=5V

FE

INDUCTIVE LOAD

t

s

t

f

St orage Time
Fall T ime

INDUCTIVE LOAD

t

∗

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

s

t

f

St orage Time
Fall T ime

I

=10mA 9 V

E

IC=1A IB=0.2A

=2A IB=0.4A

I

C

I

=3A IB=0.6A

C

IC=1A IB=0.2A

=2A IB=0.4A

I

C

=3A IB=0.6A

I

C

0.5

0.7

1.1
1

1.1

1.2

10

I

=3A VCE=2.5V

C

10

IC=2A IB1=0.4A
V
V

=-5V RBB=0Ω

BE(off)

= 250 V L = 200 µ H

CL

1.2
80

1.9

160

IC=2A IB1=0.4A
V
V
T

=-5V RBB=0Ω

BE(off)

= 250 V L = 2 00 µ H

CL

= 125oC

j

1.8

150

µA
µA

V
V
V

V
V
V

µs
ns

µs
ns

Safe Operating Areas DeratingCurve

2/7

BUL310/PI

DCCurrent Gain

CollectorEmitter SaturationVoltage

DC Current Gain

BaseEmitter Saturation Voltage

InductiveFall Time

InductiveStorage Time

3/7