SGS Thomson Microelectronics BUL310FP Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMICPARAMETERS
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERIZED AT 125
■ LARGERBSOA
■ FULLYMOLDED ISOLATEDPACKAGE
■ 2000V DC ISOLATION(U.L. COMPLIANT)
o
C
BUL310FP
NPN POWER TRANSISTOR
3
2
1
APPLICATIONS
■ ELECTRONICBALLASTSFOR
TO-220FP
FLUORESCENT LIGHTING
■ FLYBACKAND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
The BUL310FP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaininga wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
I
P
T
Collector-Emitter Voltage ( VBE= 0) 1000 V
CES
Collect or- E m itter Volta ge (I B = 0) 500 V
CEO
Emitter-Base Voltage (I C = 0) 9 V
EBO
Collect or Current 5 V
I
C
Collect or Peak Current (tp<5 ms) 10 A
CM
Base Current 3 A
I
B
Base Peak Curr ent ( tp<5 ms) 4 A
BM
Tot al Dissipa t ion at Tc = 25oC36W
tot
Storage Temperature -65 to 1 50
stg
Max. O perating Junc t i on T emperature 150
T
j
o
C
o
C
April 1998
1/6
BUL310FP
THERMAL DATA
R
thj-case
R
thj- amb
Ther mal Resistance Ju nct io n- Case Max
Thermal Resistance Junction-Ambient Max
3.5
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector C ut -off
Current (V
BE
=0)
Collector C ut -off
Current (I
B
=0)
Collector-E mitter
=1000V
V
CE
V
=1000V Tj= 125oC
CE
V
=400V 250 µA
EC
100
500
IC= 100 mA L= 25 mH 500 V
Sust aining V olt ag e
V
V
CE(sat)
EBO
Emitt er-Base V oltage
=0)
(I
C
∗ Collector-E mitter
Saturation Voltage
V
∗ Base-Emitt er
BE(sat )
Saturation Voltage
h
∗ DC C urr ent Gain IC=10mA VCE=5V
FE
INDUCTI V E LOA D
t
s
t
f
St orage Time
Fall T ime
INDUCTI V E LOA D
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
St orage Time
Fall T ime
I
=10mA 9 V
E
IC=1A IB=0.2A
=2A IB=0.4A
I
C
=3A IB=0.6A
I
C
IC=1A IB=0.2A
=2A IB=0.4A
I
C
I
=3A IB=0.6A
C
0.5
0.7
1.1
1
1.1
1.2
10
=3A VCE=2.5V
I
C
10
IC=2A IB1=0.4A
V
V
=-5V RBB=0Ω
BE(of f)
= 250 V L = 200 µ H
CL
1.2
80
1.9
160
IC=2A IB1=0.4A
V
V
T
=-5V RBB=0Ω
BE(of f)
= 250 V L = 2 00 µ H
CL
= 125oC
j
1.8
150
µA
µA
V
V
V
V
V
V
µs
ns
µs
ns
Safe Operating Areas DeratingCurve
2/6
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