SGS Thomson Microelectronics BUL310 Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronics PREFERRED
SALESTYPE
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMIC PARAMETERS
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERISEDAT 125
■ LARGERBSOA
o
C
BUL310
NPN POWER TRANSISTOR
3
2
1
APPLICATIONS
■ ELECTRONICBALLASTSFOR
TO-220
FLUORESCENT LIGHTING
■ FLYBACKAND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
INTERNAL SCHEMATIC DIAGRAM
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaininga wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Val u e Uni t
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE= 0) 1000 V
CES
Collector-Em it t e r V o lt a ge ( IB = 0) 500 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
Collector Curren t 5 V
I
C
Collector Peak Current (tp<5 ms) 10 A
CM
Base Curre nt 3 A
I
B
Base Peak Current ( tp<5 ms) 4 A
BM
Tot al Diss ip at i on at Tc = 25oC75W
tot
Sto rage T emperatur e -65 to 150
stg
Max. Operating Junction Te mperature 150
T
j
o
C
o
C
January 1999
1/6
BUL310
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist an c e Junction-Case Max
Ther mal Resist an c e Junction-Ambient Max
1.65
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Min. Typ. Max. Un it
I
CES
I
CEO
V
CEO(sus)
Collec t or Cut -off
Current (V
BE
=0)
Collec t or Cut -off
Current (I
B
=0)
Collec t or -Emitt er
V
= 1000 V
CE
= 1000 V Tj=125oC
V
CE
V
= 400 V 250 µA
EC
100
500
IC= 100 mA L= 25 mH 500 V
Sust aining Vo lt age
V
V
CE(sat)
EBO
Emitter-Base Voltage
=0)
(I
C
∗ Collector-E mitter
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urrent Gain IC=10mA VCE=5V
FE
INDUCTIV E LO AD
t
s
t
f
Storage Time
Fall Time
INDUCTIV E LO AD
t
∗
Pulsed: Pulse duration = 300 µs,duty cycle1.5 %
s
t
f
Storage Time
Fall Time
I
=10mA 9 V
E
IC=1A IB=0.2A
=2A IB=0.4A
I
C
=3A IB=0.6A
I
C
IC=1A IB=0.2A
=2A IB=0.4A
I
C
=3A IB=0.6A
I
C
0.5
0.7
1.1
1
1.1
1.2
10
=3A VCE=2.5V
I
C
10
IC=2A IB1=0.4A
V
V
=-5V RBB=0Ω
BE(off )
=250V L=200µH
CL
1.2
80
1.9
160
IC=2A IB1=0.4A
V
V
T
=-5V RBB=0Ω
BE(off )
=250V L=200µH
CL
=125oC
j
1.8
150
µA
µA
V
V
V
V
V
V
µs
ns
µs
ns
Safe Operating Areas DeratingCurve
2/6
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