SGS Thomson Microelectronics BUL216 Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ VERYHIGH SWITCHINGSPEED
■ HIGH OPERATINGJUNCTION
TEMPERATURE
■ HIGH RUGGEDNESS
BUL216
NPN POWER TRANSISTOR
APPLICATIONS
■ ELECTRONICBALLASTSFOR
3
2
1
FLUORESCENT LIGHTING
■ SWITCHMODE POWER SUPPLIES
TO-220
DESCRIPTION
The BUL216 is manufacturedusing high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structureto enhance switching speeds.
The BUL series is designed for use in lighting
INTERNAL SCHEMATIC DIAGRAM
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE= 0) 1600 V
CES
Collector-Emitter Voltage (IB= 0) 800 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 4 A
I
C
Collect or Peak Current ( tp<5ms) 6 A
CM
Base Current 2 A
I
B
Base Peak Current (tp<5ms) 4 A
BM
Total Dissipat ion at Tc=25oC90W
tot
Stora ge T emperature -65 to 150
stg
Max. Oper at i ng Junction Temperature 150
T
j
o
C
o
C
September 1997
1/6
BUL216
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Ju nc t io n- Case Max
Thermal Resistance Junction-Ambient Max
1.39
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector Cut-off
Current (V
BE
=0)
Collector Cut-off
Current (I
B
=0)
Collector-Emit t er
=1600V
V
CE
V
=1600V Tj= 125oC
CE
V
=800V 250 µA
CE
100
500
IC= 100 mA L = 25 m H 800 V
Sust aining V olt ag e
V
V
CE(sat)
EBO
Emitt er-Base V oltage
=0)
(I
C
∗ Collector-Emit t er
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urr ent Gain IC=0.4A VCE=5V
FE
INDUCTIVE LOAD
t
s
t
f
St orage Time
Fall T ime
INDUCTIVE LOAD
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
St orage Time
Fall T ime
I
=10mA 9 V
E
IC=1A IB=0.2A
=2A IB=0.66A
I
C
IC=1A IB=0.2A
I
=2A IB=0.66A
C
=10mA VCE=5V
I
C
12
10
1
3
1.2
1.2
40
IC=1.5A IB1=0.5A
V
V
=-5V RBB=0Ω
BE(off)
= 250 V L = 200 µH
CL
2.1
450
3.3
720
IC=1.5A IB1=0.5A
V
V
T
=-5V RBB=0Ω
BE(off)
= 250 V L = 200 µH
CL
= 100oC
j
3
600
µA
µA
V
V
V
V
µs
ns
µs
ns
Safe Operating Areas Derating Curve
2/6
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