SGS Thomson Microelectronics BUL1603ED Datasheet

®
HIGH VOLTAGE FAS T-SWITCHING
INTEGRATED ANTISATURATION AND
PROTECTION NETWORK
INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
LOW SPREAD OF DYNA MIC PA RA ME TERS
MINIMUM LOT-TO-LOT SPRE AD F O R
RELIABLE OPERATION
VERY H IGH SWITCHING SPE ED
ARCING TEST SELF PROTECTED
BUL1603ED
NPN POW ER TRANSISTOR
PRELIMINARY DATA
3
2
1
APPLICATIONS
TWO LAMPS ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING 277 V
AC
IN
TO-220
PUSH-PULL CONF IGURA TION
DESCRIPTION
The BUL1603ED is a new device designed for fluorescent electronic ballast 277 V
push-pull
AC
INTER NAL SCH E M ATI C DIAG RA M
applications. This device can be used without baker clamp and
transil protection, reducing greatly the component count.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V V
I
I P
T
Collector-Emitter Voltage
CES
(V
= 0; I
BE
Collector-Emitter Voltage
CES
(VBE = 0; I Collector-Emitter Voltage (IB = 0) 650 V
CEO
Emitter-Base Voltage (IC = 0) 11 V
EBO
I
Collector Current 3 A
C
Collector Peak Current (tp <5 ms) 6 A
CM
I
Base Current 2 A
B
Base Peak Current (tp <5 ms) 4 A
BM
Total Dissipation at Tc = 25 oC80W
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
= 10 mA; )
CES
= 100 µA; )
CES
1600 V
1550 V
o
C
o
C
September 2002
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BUL1603ED
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max
1.56
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
(BR)CES
V
CEO(sus)
Collector Cut-off Current (V
BE
= 0)
Emitter Cut-off Current (I
= 0)
C
Collector-Emitter Breakdown Voltage (V
= 0)
BE
Collector-Emitter
= 1550 V 100 µA
V
CE
= 9 V 100 µA
V
EB
I
= 10 mA
C
= 100 µA
I
C
I
= 100 mA L = 25 mH 650 V
C
1600 1550
Sustaining Voltage (I
= 0)
B
V
(BR)EBO
Emitter-Base
I
= 10 mA 11 18 V
E
Breakdown Voltage (I
= 0)
C
Collector-Emitter
V
CE(sat)
Saturation Voltage
V
Base-Emitter
BE(sat)
IC = 1 A IB = 0.25 A I
= 0.25 A IB = 0.025 A
C
1.5
1.5
IC = 1 A IB = 0.25 A 1.2 V
Saturation Voltage
h
DC Current Gain IC = 5 mA VCE = 10 V
FE
I
= 0.4 A VCE = 3 V
C
I
= 1 A VCE = 1.5 V
C
18 15
4
40
RESISTIVE LOAD
t t
E
Delay Time
d
Rise Time
t
r
Storage Time
s
Fall Time
t
f
Repetitive Avalanche
ar
Energy
I
= 0.5 A VCC = 125 V
C
I
= 0.05 A IB2 = -0.25 A
B1
D.C. = 2% P.W. = 300 µs (see figure 1)
L = 2 mH C = 1.8 nF V
= 50 V VBE = -5 V
CC
0.3
0.8
1.2
0.35
6mJ
(see figure 2)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
V V
V V
µs µs µs µs
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