SGS Thomson Microelectronics BUL1403ED Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ INTEGRATED ANTISATURATIONAND
PROTECTIONNETWORK
■ INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREADOF DYNAMIC PARAMETERS
■ MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
■ VERYHIGH SWITCHING SPEED
■ ARCINGTEST SELFPROTECTED
BUL1403ED
NPN POWER TRANSISTOR
3
2
1
APPLICATIONS
■ 2/4 LAMPSELECTRONICBALLASTFOR
FLUORESCENT LIGHTING277 V
AC
TO-220
PUSH-PULL CONFIGURATION
DESCRIPTION
The BUL1403ED is a new device, designed for
fluorescent electronic ballast 277 V
push-pull
AC
INTERNAL SCHEMATIC DIAGRAM
applications(up to 4 lamps).
This device, it can be used without baker clamp
and transil protection, reducing greatly the
componentcount.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collect or-Emitter Volt age (VBE= 0 ) 1400 V
CES
Collect or-Emitter Volt age (IB= 0 ) 650 V
CEO
Emitter-Base Voltage (IC=0) 7 V
EBO
Collect or Current 3 A
I
C
Collect or Peak Cu r rent (tp<5ms) 6 A
CM
Base Current 2 A
I
B
Base P eak Current (tp<5ms) 4 A
BM
Tot al Diss ipa t io n at Tc=25oC80W
tot
Storage Temperature -65 to 150
stg
Max. Operat ing Junctio n Tempe rature 150
T
j
o
C
o
C
June 1999
1/6
BUL1403ED
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist ance Junctio n-Case Max
Ther mal Resist ance Junctio n-A mbient Max
1.56
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Un it
I
I
CES
EBO
Collec t or Cut -off
Current (V
BE
=0)
Base-Emi tter Lea kage
V
= 1400 V 1 mA
CE
VEB=7V 100 µA
Current
V
CEO(sus)
Collec t or -Emit t er
I
=10mA L=25mH 650 V
C
Sust aining Voltage
=0)
(I
B
∗ Collect or- Emit t er
V
CE(sat)
Saturation Voltage
V
∗ Base- Emi tter
BE(sat)
Saturation Voltage
h
∗ DC Curr ent Gain IC=5mA VCE=10V
FE
IC=0.5A IB=0.05A
=0.25A IB=0.025A
I
C
IC=0.5A IB=0.1A
=1A IB=0.1A
I
C
=2A IB=0.4A
I
C
=0.4A VCE=3V
I
C
=0.8A VCE=5V
I
C
18
15
4
2.5
1.5
1.0
1.1
1.2
RESI STIVE LOAD
t
t
E
Delay Tim e
d
t
Rise T ime
r
Storage Ti me
s
t
Fall Time
f
Repe ti tive Avalanche
sb
=0.5A VCC=125V
I
C
=0.05A IB2= -0.25 A
I
B1
D.C. = 2% P.W . = 300 µs
L=2mH 6 mJ
0.3
0.8
1.2
0.35
Energy
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
V
V
V
V
V
µs
µs
µs
µs
2/6
Loading...