SGS Thomson Microelectronics BUL138 Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronicsPREFERRED
SALESTYPE
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMIC PARAMETERS
■ MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERIZED AT 125
APPLICATIONS
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ FLYBACKAND FORWARDSINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUL138 is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhanceswitchingspeeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
o
C
BUL138
NPN POWER TRANSISTOR
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
May 1999
Collect or-Emit t e r V oltage (VBE= 0 ) 800 V
CES
Collect or-Emit t e r V oltage (IB= 0 ) 400 V
CEO
Emitter-Base Vol tage (IC=0) 9 V
EBO
Collect or Current 5 A
I
C
Collect or Peak Cu rr ent (tp<5ms) 10 A
CM
Base Current 2 A
I
B
Base P eak Cu rrent (tp<5ms) 4 A
BM
Tot al Dissipa t ion at Tc=25oC80W
tot
Storage Temperature -65 to 150
stg
Max. Ope r ating Junct io n Tempe r ature 150
T
j
o
C
o
C
1/6
BUL138
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist an c e Junction-case Max
Ther mal Resist an c e Junction-ambie nt Max
1.56
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
CES
I
CEO
V
CEO(sus)
Collec t or Cut -off
Current (V
BE
=0)
Collec t or Cut -off
Current (I
B
=0)
Collec t or -Emitt er
V
=800V
CE
=800V Tj=125oC
V
CE
V
= 400 V 250 µA
CE
100
500
IC= 100 m A L = 25 mH 400 V
Sust aining V o lt age
V
EBO
V
CE(sat)
V
BE(sat)
h
FE
t
t
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Emitter-Base Voltage IE=10mA 9 V
∗ Collector-E mitter
Saturation Voltage
∗ Base-Emitt er
Saturation Voltage
∗ DC Current Gain IC=2A VCE=5V
RESI STIVE LOAD
Storage Ti me
s
INDUCTIV E LO AD
Storage Ti me
s
t
Fall Time
f
INDUCTIV E LO AD
Storage Ti me
s
t
Fall Time
f
IC=1A IB=0.2A
=2A IB=0.4A
I
C
=3A IB=0.6A
I
C
=4A IB=1A
I
C
=5A IB=1A 0.7
I
C
IC=1A IB=0.2A
=2A IB=0.4A
I
C
=3A IB=0.6A
I
C
8
=10mA VCE=5V
I
C
10
IC=2A IB1=-IB2=0.4A
= 2 50 V 2.4 3.5 µs
V
CC
IC=2A IB1=0.4A
V
V
=-5V RBB=0Ω
BE(off )
=250V L=200µH
CL
0.7
50
IC=2A IB1=0.4A
V
V
T
=-5V RBB=0Ω
BE(off )
=250V L=200µH
CL
=125oC
j
1
75
0.5
0.7
1
1
1.1
1.3
1.5
40
1.4
100
µA
µA
V
V
V
V
V
V
V
V
µs
ns
µs
ns
Safe Operating Areas DeratingCurve
2/6
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