SGS Thomson Microelectronics BUL1203E Datasheet
®
HIGH VOLTAGE FAS T-SWITCHING
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNA MIC PA RA ME TERS
■ MINIMUM LOT-TO-LOT SP R E AD F O R
RELIAB LE OPERATION
■ VERY HIGH SWITCHING SPEED
APPLICATIONS
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING (277 V HALF
BRIDGE AND 120 V PUSH-PULL
TOPOLOGIES)
BUL1203E
NPN POW ER TRANSISTOR
PRELIMINARY DATA
3
2
1
DESCRIPTION
TO-220
The BUL1203E is a new device manufactured
using Diffused Collector technology to enhance
switching speeds and tight h
range while
FE
maintaining a wide RBSOA.
Thanks to his structure it has an intrinsic
ruggedness which enables the transistor to
INTER NAL SCH E M ATI C DIAG RA M
withstand a high collector current level during
Breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
I
P
T
Collector-BaseVoltage (IE = 0) 1200 V
CBO
Collector-Emitter Voltage (VBE = 0) 1200 V
CES
Collector-Emitter Voltage (IB = 0) 550 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
Collector Current 5 A
I
C
Collector Peak Current (tp < 5 ms) 8 A
CM
Base Current 2 A
I
B
Base Peak Current (tp < 5 ms) 4 A
BM
Total Dissipation at Tc = 25 oC 100 W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
June 2003
1/7
BUL1203E
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.25
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
= 0)
B
∗ Collector-Emitter
= 1200 V 100 µA
V
CE
= 550 V 100 µA
V
CE
I
= 100 mA L = 25 mH 550 V
C
Sustaining Voltage
(I
= 0)
B
V
V
CE(sat)
EBO
Emitter-Base Voltage
(I
= 0)
C
∗ Collector-Emitter
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 1 mA VCE = 5 V
FE
RESISTIVE LOAD
t
t
E
Turn-on Time
on
Storage Time
s
Fall Time
t
f
Repetitive Avalanche
ar
Energy
= 10 mA 9 V
I
E
IC = 1 A IB = 0.2 A
I
= 2 A IB = 0.4 A
C
I
= 3 A IB = 1 A
C
IC = 2 A IB = 0.4 A
I
= 3 A IB = 1 A
C
0.5
0.7
1.5
1.5
1.5
10
I
= 10 mA VCE = 5 V
C
I
= 0.8 A VCE = 3 V
C
I
= 2 A VCE = 5 V
C
I
= 2 A IB1 = 0.4 A
C
= -0.8 A tp = 30 µs
I
B2
V
= 150 V (see figure 2)
CC
L = 2 mH C = 1.8 nF
V
= 50 V VBE = -5 V
CC
10
14
9
32
28
0.5
2.5
0.2
3.0
0.3
6mJ
(see figure 3)
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
V
V
V
V
V
µs
µs
µs
Safe Operating Are a Derating Curve
2/7
DC Current Gain DC Current Gain
Collector -Emit ter Sat urat ion Voltage Base-Emitt er Sat uration Volta ge
BUL120 3 E
Inductive Load Storage Time Inductive Load Fall Time
3/7
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