SGS Thomson Microelectronics BUL1102E Datasheet
®
HIGH VOLTAGE FAST-SWITCHING
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT- TO- LO T SP RE AD F OR
RELIAB LE OPERATION
■ VERY HIGH SWITCHING SPEED
APPLICATIONS
■ FOUR LAMP ELECTRONIC BALLAST FOR:
120 V MAINS IN PUSH-PULL
CONFIGU R AT ION;
277 V MAINS IN HALF BRIDGE CURRENT
FEED CONFIGURATION.
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand a high collector current
level during Breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
BUL1102E
NPN POW ER TRANSISTOR
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
March 2003
Collector-Emitter Voltage (VBE = 0) 1100 V
CES
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 12 V
EBO
Collector Current 4 A
I
C
Collector Peak Current (tp <5 ms) 8 A
CM
Base Current 2 A
I
B
Base Peak Current (tp <5 ms) 4 A
BM
Total Dissipation at Tc = 25 oC70W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
1/6
BUL1102E
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case Max 1.78
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
B
∗ Collector-Emitter
= 1100 V 100 µA
V
CE
= 12 V 1 mA
V
EB
I
= 100 mA 450 V
C
Sustaining Voltage
(I
= 0)
B
V
CE(sat)
∗ Collector-Emitter
IC = 2 A IB = 400 mA 1.5 V
Saturation Voltage
V
BE(sat)
∗ Base-Emitter
IC = 2 A IB = 400 mA 1.5 V
Saturation Voltage
∗ DC Current Gain IC = 250 mA VCE = 5 V
h
FE
RESISTIVE LOAD
t
E
Storage Time
s
Fall Time
t
f
Avalanche Energy L = 2 mH C = 1.8 nF
ar
I
= 2 A VCE = 5 V
C
I
= 2.5 A VCC = 250 V
C
I
= 0.5 A IB2 = 1 A
B1
= 30 µs (see figure 2)
T
P
≤ 2.5A 25oC < TC <125oC
I
BR
35
12
70
20
2.5
300
6mJ
(see figure 1)
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
µs
ns
Safe Operating Areas Derating Curve
2/6
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