®
HIGH VOLTAGE FAST-SWITCHING
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT- TO- LO T SP RE AD F OR
RELIAB LE OPERATION
■ VERY HIGH SWITCHING SPEED
APPLICATIONS
■ FOUR LAMP ELECTRONIC BALLAST FOR:
120 V MAINS IN PUSH-PULL
CONFIGU R AT ION;
277 V MAINS IN HALF BRIDGE CURRENT
FEED CONFIGURATION.
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand a high collector current
level during Breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
BUL1102E
NPN POW ER TRANSISTOR
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
March 2003
Collector-Emitter Voltage (VBE = 0) 1100 V
CES
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 12 V
EBO
Collector Current 4 A
I
C
Collector Peak Current (tp <5 ms) 8 A
CM
Base Current 2 A
I
B
Base Peak Current (tp <5 ms) 4 A
BM
Total Dissipation at Tc = 25 oC70W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
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BUL1102E
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case Max 1.78
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
B
∗ Collector-Emitter
= 1100 V 100 µA
V
CE
= 12 V 1 mA
V
EB
I
= 100 mA 450 V
C
Sustaining Voltage
(I
= 0)
B
V
CE(sat)
∗ Collector-Emitter
IC = 2 A IB = 400 mA 1.5 V
Saturation Voltage
V
BE(sat)
∗ Base-Emitter
IC = 2 A IB = 400 mA 1.5 V
Saturation Voltage
∗ DC Current Gain IC = 250 mA VCE = 5 V
h
FE
RESISTIVE LOAD
t
E
Storage Time
s
Fall Time
t
f
Avalanche Energy L = 2 mH C = 1.8 nF
ar
I
= 2 A VCE = 5 V
C
I
= 2.5 A VCC = 250 V
C
I
= 0.5 A IB2 = 1 A
B1
= 30 µs (see figure 2)
T
P
≤ 2.5A 25oC < TC <125oC
I
BR
35
12
70
20
2.5
300
6mJ
(see figure 1)
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
µs
ns
Safe Operating Areas Derating Curve
2/6
BUL1102E
DC Current Gain
Collector Emitter Sat uration Volt a ge
DC Current Gain
Base Emitter Satur ation Voltage
Switching Time Resistive Load
Switching Time Inductive Load
3/6
BUL1102E
Reverse B iased SOA
Figure 1: Energy Rating Test Cir cuit
Figure 2: Resistive Load Switching Test Circuit
4/6
TO-220 MECHANICAL DATA
BUL1102E
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.052
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10.00 10.40 0.394 0.409
L2 16.40 0.645
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
M 2.60 0.102
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
P011CI
5/6
BUL1102E
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectro nics – Printed in Italy – All Rights Reserved
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