SGS Thomson Microelectronics BU808DFP Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronicsPREFERRED
SALESTYPE
■ NPNMONOLITHICDARLINGTON WITH
INTEGRATED FREE-WHEELING DIODE
■ HIGH VOLTAGECAPABILITY( >1400 V )
■ HIGH DC CURRENT GAIN ( TYP. 150 )
■ FULLYMOLDED ISOLATEDPACKAGE2KV
DC ISOLATION(U.L. COMPLIANT)
■ LOW BASE-DRIVEREQUIREMENTS
■ DEDICATED APPLICATIONNOTE AN1184
BU808DFP
NPN POWER DARLINGTON
3
2
1
APPLICATIONS
■ COST EFFECTIVESOLUTIONFOR
TO-220FP
HORIZONTAL DEFLECTIONIN LOW END
TV UP TO 21 INCHES.
DESCRIPTION
The BU808DFP is a NPN transistor in monolithic
Darlington configuration. It is manufactured using
INTERNAL SCHEMATIC DIAGRAM
Multiepitaxial Mesa technology for cost-effective
high performance.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collect or-Base Vol t age (IE= 0) 1400 V
CBO
Collect or-Emitte r V oltage (IB= 0) 700 V
CEO
Emitter-Base Voltag e (IC=0) 5 V
EBO
Collect or Current 8 A
I
C
Collect or Peak Cur rent (tp<5ms) 10 A
CM
Base Current 3 A
I
B
Base Pea k Curre nt (tp<5ms) 6 A
BM
Tot al Dissipa t io n at Tc=25oC42W
tot
Storage Temperature -65 to 150
stg
Max. Oper ating Junc t io n T e m pe r ature 150
T
j
o
C
o
C
June 2000
1/7
BU808DFP
THERMAL DATA
R
thj-case
Ther mal Resist ance Junctio n- ca s e M ax 2.98
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
CES
Collec t or Cut -off
Current (V
I
EBO
Emitt er Cut -of f Cu rrent
(I
∗ Collec t or -Emit t er
V
CE(sat)
C
=0)
BE
=0)
V
= 1400 V 400 µA
CE
V
=5V 100 mA
EB
IC=5A IB=0.5A 1.6 V
Saturation Voltage
∗ Base-Emi tter
V
BE(sat )
IC=5A IB=0.5A 2.1 V
Saturation Voltage
∗ DC Current Gain IC=5A VCE=5V
h
FE
INDUCTIVE LOAD
t
s
t
f
Storage Time
Fall Time
INDUCTIVE LOAD
t
V
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Storage Time
s
t
Fall Time
f
Diode Forwa r d Volt ag e IF=5A 3 V
F
=5A VCE=5V Tj=100oC6020
I
C
VCC=150V IC=5A
=0.5A V
I
B1
VCC=150V IC=5A
=0.5A V
I
B1
=100oC
T
j
=-5V 3
BEo f f
=-5V
BEo f f
0.8
230
0.8
2
µs
µs
µs
µs
Safe Operating Area ThermalImpedance
2/7
BU808DFP
Derating Curve
CollectorEmitterSaturationVoltage
DC Current Gain
BaseEmitterSaturation Voltage
PowerLosses at 16 KHz
SwitchingTime InductiveLoad at 16KHz
3/7
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