SGS Thomson Microelectronics BU326A Datasheet
BU326A
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ FAST SWITCHING SPEED
APPLICATIONS:
■ POWER SUPPLI ES
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BU326A is a silicon multiepitaxial mesa NPN
transistor in Jedec TO-3 metal case particularly
intended for switch-mode CTV supply system.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Emitter Voltage (V
CES
Collector-Emitter Voltage (IB = 0) 400 V
CEO
Emitter-Base Voltage (IC = 0) 10 V
EBO
Collector Current 6 A
I
C
Collector Peak Current 8 A
CM
Base Current 3 A
I
B
Total Power Dissipation at T
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
= 0) 900 V
BE
≤ 25 oC75W
case
o
C
o
C
June 1997
1/4
BU326A
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 2.33
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE(sat)
h
FE
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Collector Cut-off Current
(V
= 0)
BE
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage(I
= 0)
B
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter Saturation
Voltage
= 900 V
V
CE
V
= 900 V Tc = 125 oC
CE
= 10 V 10 mA
V
EB
= 100 mA 400 V
I
C
IC = 2.5 A IB = 0.5 A
I
= 4 A IB = 1.25 A
C
IC = 2.5 A IB = 0.5 A
I
= 4 A IB = 1.25 A
C
∗ DC Current Gain IC = 1 A VCE = 5 V 25
Turn-on Time IC = 2.5 A IB1 = 0.5 A
on
Storage Time IC = 2.5 A IB1 = 0.5 A
s
t
Fall Time IC = 2.5 A IB1 = 0.5 A
f
V
= 250 V
CC
I
= -1A A VCC = 250 V 3.5 µs
B2
I
= -1A A VCC = 250 V 0.5 µs
B2
1
2
1.5
3
1.4
1.6
0.5 µs
mA
mA
V
V
V
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