BU326A
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ FAST SWITCHING SPEED
APPLICATIONS:
■ POWER SUPPLI ES
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BU326A is a silicon multiepitaxial mesa NPN
transistor in Jedec TO-3 metal case particularly
intended for switch-mode CTV supply system.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Emitter Voltage (V
CES
Collector-Emitter Voltage (IB = 0) 400 V
CEO
Emitter-Base Voltage (IC = 0) 10 V
EBO
Collector Current 6 A
I
C
Collector Peak Current 8 A
CM
Base Current 3 A
I
B
Total Power Dissipation at T
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
= 0) 900 V
BE
≤ 25 oC75W
case
o
C
o
C
June 1997
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BU326A
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 2.33
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE(sat)
h
FE
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Collector Cut-off Current
(V
= 0)
BE
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage(I
= 0)
B
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter Saturation
Voltage
= 900 V
V
CE
V
= 900 V Tc = 125 oC
CE
= 10 V 10 mA
V
EB
= 100 mA 400 V
I
C
IC = 2.5 A IB = 0.5 A
I
= 4 A IB = 1.25 A
C
IC = 2.5 A IB = 0.5 A
I
= 4 A IB = 1.25 A
C
∗ DC Current Gain IC = 1 A VCE = 5 V 25
Turn-on Time IC = 2.5 A IB1 = 0.5 A
on
Storage Time IC = 2.5 A IB1 = 0.5 A
s
t
Fall Time IC = 2.5 A IB1 = 0.5 A
f
V
= 250 V
CC
I
= -1A A VCC = 250 V 3.5 µs
B2
I
= -1A A VCC = 250 V 0.5 µs
B2
1
2
1.5
3
1.4
1.6
0.5 µs
mA
mA
V
V
V
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P003F
TO-3 MECHANICAL DATA
BU326A
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
mm inch
P
A
G
U
V
N
O
B
D
C
E
R
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BU326A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems wi thout express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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