Datasheet BTB24-800B, BTB24-700B, BTB24-600B, BTB24-400B Datasheet (SGS Thomson Microelectronics)

®
FEATURES
HIGH SURGE CURRENT CAPABILITY
.
COMMUTATION : (dV/dt)c > 10V/µs
.
BTB24 B
STANDARD TRIACS
DESCRIPTION
The BTB24 B triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose ap­plications where high surge current capability is re­quired. Application such as phase control and static switching on inductive or resistive load.
ABSOLUTE RATINGS
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
I2tI
dI/dt Critical rate of rise of on-state current
Tstg
Tj Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
RMS on-state current (360° conduction angle)
Non repetitive surge peak on-state current ( Tj initial = 25°C )
2
t value tp = 10 ms 312 A2s
Gate supply : IG = 2 . IGT tr ≤ 100ns Storage and operating junction temperature range - 40 to + 150
from case
(limiting values)
tp = 8.3 ms 260 A
tp = 10 ms 250
Repetitive
F = 100 Hz
A1
A2
G
TO220AB
(Plastic)
50 A/µ s
- 40 to + 125 260 ° C
°C °C
Symbol Parameter BTB24-... B Unit
400 600 700 800
V
DRM
V
RRM
October 1998 - Ed: 2A
Repetitive peak off-state voltage Tj = 125 °C
400 600 700 800 V
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BTB24 B
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC 1.5 °C/W
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 1.1 °C/W
GATE CHARACTERISTICS
P
= 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs).
G (AV)
(maximum v alu es )
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Quadrant Suffix Unit
I
GT
V
GT
V
GD I
L
IH *I
VTM *ITM= 35A tp= 380µs Tj=25°C MAX 1.6 V
I
DRM
I
RRM
dV/dt * Linear slope up to VD=67%V
(dV/dt)c * (dI/dt)c = 11.1A/ms Tj=125°C MIN 10 V/µs
* For either polarit y of electrode A2 voltage with reference to elec trode A1.
VD=12V (DC) RL=33 Tj=25°C I-II-III-IV MIN 5 mA
I-II-III MAX 50
IV MAX 100 VD=12V (DC) RL=33 Tj=25°C I-II-III-IV MAX 1.3 V VD=V IG=1.2 I
RL=3.3k Tj=125°C I-II-III-IV MIN 0.2 V
DRM
GT
Tj=25°C I-III-IV MAX 70 mA
II 150
= 500mA gate open Tj=25°C MAX 50 m A
T
V
DRM
V
RRM
Rated Rated
DRM
Tj=25°CMAX5µA Tj=125°CMAX2mA Tj=125°C MIN 750 V/µs
gate open
Fig. 1: Maximum power dissipation versus RMS on-state current.
P(W)
35 30 25 20 15
α = 90°
α = 60°
α = 120°
10
α = 30°
5 0
0 5 10 15 20 25
IT(rms)(A)
α = 180°
α
180°
α
2/4
Fig. 2: Correlation between maximum power dissipation
and maximum allowable temperatures (T
T
) for different thermal resistances heatsink +
case
amb
and
contact.
Rth=0°C/W
Tcase (°C)
90
100
110
120 125
P(W)
35
Rth=3°C/W
30
25
20
15
10
α = 180°
5 0
0 20 40 60 80 100 120 140
Rth=2°C/W
Rth=1°C/W
Tamb(°C)
BTB24 B
Fig. 3: RMS on-state current versus case temperature.
IT(rms)(A)
30
α = 180°
25 20 15 10
5
Tcase(°C)
0
0 25 50 75 100 125
Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature (typical values).
IGT,IH[Tj] / IGT,IH[Tj=25°C]
2.5
2.0
IGT
1.5
1.0
IH
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
Fig. 4: Relative variation of thermal impedance versus
pulse duration.
K=[Zth/Rth]
1.00
Zth(j-c)
0.10
Zth(j-a)
tp(s)
0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig. 6: Non Repetitive surge peak on-state current versus number of cycles.
ITSM(A)
220 200 180 160 140 120 100
80 60 40 20
0
1 10 100 1000
Number of cycles
Tj initial=25°C
F=50Hz
Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width : t10ms, and corresponding value of I2t.
ITSM(A),I²t(A²s)
1000
500
ITSM
I²t
200
tp(ms)
100
12 510
Tj initial=25°C
Fig. 8: On-state characteristics (maximum values).
ITM(A)
300
100
Tj=25°C
Tj=Tj max.
10
Tj max.:
Vto=0.95V
VTM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Rt=19m
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BTB24 B
PACKAGE MECHANICAL DATA
TO220AB Plastic
B
I
L
A
l1
l3
a2
e
e
l2
b1
b1
C
b2
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
F
A 14.23 15.87 0.560 0.625 a1 4.50 0.177 a2 12.70 14.70 0.500 0.579
B 10.20 10.45 0.402 0.411 b1 0.64 0.96 0.025 0.038
a1
b2 1.15 1.39 0.045 0.055
C 4.48 4.82 0.176 0.190 c1 0.35 0.65 0.020 0.026 c2 2.10 2.70 0.083 0.106
e 2.29 2.79 0.090 0.110
F 5.85 6.85 0.230 0.270
I 3.55 4.00 0.140 0.157
L 2.54 3.00 0.100 0.118
c1
c2
I1 1.30 0.051 l2 1.45 1.75 0.057 0.069 l3 0.80 1.20 0.031 0.047
Cooling method : C Marking : type number Weight : 2.25 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N.
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