Datasheet BTB20-600CW, BTA20-600BW, BTA20-700CW, BTA20-700BW, BTA20-600CW Datasheet (SGS Thomson Microelectronics)

BTA20 BW/CW
®
FEATURES
High commutation: (dI/dt)c > 18A/ms
without snubber High surge current: I
V
up to 800V
DRM
BTA Family: Insulating voltage = 2500V
TSM
= 200A
(RMS)
(UL recognized: E81734)
DESCRIPTION
The BTA/BTB20 BW/CW triac family are high per­formance glass passivated chips technology. The SNUBBERLESSconcept offer suppression ofRCnetworkanditis suitable for applicationsuch as phase control and static switching on inductive or resistive load.
BTB20 BW/CW
SNUBBERLESS TRIACS
A2
G
A1
A1
A2
G
TO-220AB
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
2
I
dI/dt Critical rate of rise of on-state current
Tstg
Tj Tl Maximum lead soldering temperature during 10s at 4.5mm from case 260 °C
Symbol Parameter
V
DRM
V
RRM
RMS on-state current (360° conduction angle) BTA Tc = 70°C 20 A
BTB Tc = 90°C
Non repetitive surge peak on-state current (Tj initial = 25°C)
tI
2
t value tp = 10ms 200 A2s
Gate supply: I
Storage and operating junction temperature range -40 to +150
= 500mA dIG/dt = 1A/µs
G
Repetitive peak off-state voltage Tj = 125°C
tp = 8.3ms 210 A
tp = 10ms 200
Repetitive
F = 50Hz
Non repetitive 100
-40 to +125
BTA/BTB20-...BW/CW
600 700
600 700 V
20 A/µs
°C
Unit
September 2001 - Ed: 1A
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BTA20 BW/CW BTB20 BW/CW
THERMAL RESISTANCE
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC BTA 2.8 °C/W
BTB 1.7
Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz) BTA 2.1 °C/W
BTB 1.3
GATE CHARACTERISTICS (maximum values) P
ELECTRICAL CHARACTERISTICS
=1W PGM= 10W (tp = 20µs) IGM= 4A (tp = 20µs) VGM= 16V (tp = 20µs)
G(AV)
Symbol Testconditions Quadrant
BTA / BTB20
BW CW
I
GT
VD= 12V (DC) RL=33 Tj = 25°C I - II - III MIN. 2 1 mA
MAX. 50 35
V
GT
V
GD
tgt VD=V
I
VD= 12V (DC) RL=33 Tj= 25°C I - II - III MAX. 1.5 V VD=V
DRM
DRMIG
dI
/dt = 3A/µs
G
IG= 1.2I
L
GT
RL= 3.3k Tj =125°C I - II - III MIN. 0.2 V
= 500mA
Tj = 25°C I - II - III TYP. 2 µs
Tj = 25°C I - III TYP. 50 - mA
II 90 -
I - II - III MAX. - 80
*I
I
H
= 500mA Gate open Tj = 25°C MAX. 75 50 mA
T
VTM*ITM= 28A tp = 380µs Tj = 25°C MAX. 1.70 V
I
DRM
I
RRM
V V
DRM RRM
rated rated
Tj = 25°C MAX. 0.01 mA
Tj = 125°C MAX. 3
dV/dt * Linear slope up to
VD= 67% V
DRM
gate open
Tj = 125°C TYP. 750 500 V/µs
MIN. 500 250
Unit
(dI/dt)c* Without snubber Tj = 125°C TYP. 36 22 A/ms
MIN. 18 11
* For either polarity of electrode A2voltage with reference to electrode A
1
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PRODUCT INFORMATION
BTA20 BW/CW BTB20 BW/CW
I
Package
BTA (Insulated)
BTB (Uninsulated)
ORDERING INFORMATION
T(RMS)
A V BW CW
20 600 X X
Triac Series
Insulation: A: insulated B: non insulated
Current: 20A
V
DRM/VRRM
700 X X 600 X
Sensitivity Specification
BT A 20 - 600 BW
Sensitivity
Voltage: 600: 600V 700: 700V
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BTA20 BW/CW BTB20 BW/CW
Fig. 1: Maximum RMS power dissipation versus
RMS on-state current (F = 50Hz).(Curves are cut off by (dI/dt)c limitation)
Fig. 3: Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamband Tcase) fordifferent thermal resistances heatsink + contact (BTB).
Fig. 2: Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA).
Fig. 4: RMS on-state current versus case temper­ature.
Fig. 5: Relative variation of thermal impedance versus pulse duration.
Zth/Rth
1
Zth(j-c)
0.1
0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
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Zth(j-a)
tp(s)
Fig. 6: Relative variation of gate trigger current and holding current versus junction temperature.
BTA20 BW/CW BTB20 BW/CW
Fig. 7: Non repetitive surge peak on-state current
versus number of cycles.
Fig. 9: On-state characteristics (maximum values).
Fig. 8: Non repetitive surge peak on-state current
fora sinusoidal pulse with width: t10ms, and cor­responding value of I
2
t.
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BTA20 BW/CW BTB20 BW/CW
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
B
b2
L
I
A
l4
a1
l3
l2
a2
b1
e
DIMENSIONS
REF.
C
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
a1 3.75 0.147
F
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
M
c1
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 M 2.60 0.102
OTHER INFORMATION
Ordering type Marking Package Weight Base qty Delivery mode
BTA/BTB20-xxxyz BTA/BTB20-xxxyz TO-220AB 2.3 g 250 Bulk
Epoxy meets UL94,V0
Cooling method: C
Recommended torque value: 0.8 m.N.
Maximum torque value: 1 m.N.
Informationfurnished is believed to be accurate and reliable. However,STMicroelectronicsassumes no responsibility for the consequences of useof such information nor for any infringementof patents or other rights of thirdparties which may result from its use.Nolicense is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap­proval of STMicroelectronics.
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