The BTA/BTB20 BW/CW triac family are high performance glass passivated chips technology.
The SNUBBERLESS concept offer suppression
ofRCnetworkanditis suitable for applicationsuch
as phase control and static switching on inductive
or resistive load.
BTB20 BW/CW
SNUBBERLESS TRIACS
A2
G
A1
A1
A2
G
TO-220AB
ABSOLUTE RATINGS (limiting values)
SymbolParameterValueUnit
I
T(RMS)
I
TSM
2
I
dI/dtCritical rate of rise of on-state current
Tstg
Tj
TlMaximum lead soldering temperature during 10s at 4.5mm from case260°C
SymbolParameter
V
DRM
V
RRM
RMS on-state current (360° conduction angle)BTATc = 70°C20A
BTBTc = 90°C
Non repetitive surge peak on-state current
(Tj initial = 25°C)
tI
2
t valuetp = 10ms200A2s
Gate supply: I
Storage and operating junction temperature range-40 to +150
= 500mA dIG/dt = 1A/µs
G
Repetitive peak off-state voltage Tj = 125°C
tp = 8.3ms210A
tp = 10ms200
Repetitive
F = 50Hz
Non repetitive100
-40 to +125
BTA/BTB20-...BW/CW
600700
600700V
20A/µs
°C
Unit
September 2001 - Ed: 1A
1/6
BTA20 BW/CW BTB20 BW/CW
THERMAL RESISTANCE
SymbolParameterValueUnit
Rth (j-a)Junction to ambient60°C/W
Rth (j-c) DC Junction to case for DCBTA2.8°C/W
BTB1.7
Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz)BTA2.1°C/W
VD= 12V (DC) RL=33ΩTj= 25°CI - II - IIIMAX.1.5V
VD=V
DRM
DRMIG
dI
/dt = 3A/µs
G
IG= 1.2I
L
GT
RL= 3.3kΩTj =125°CI - II - IIIMIN.0.2V
= 500mA
Tj = 25°CI - II - IIITYP.2µs
Tj = 25°CI - IIITYP.50-mA
II90-
I - II - IIIMAX.-80
*I
I
H
= 500mA Gate openTj = 25°CMAX.7550mA
T
VTM*ITM= 28Atp = 380µsTj = 25°CMAX.1.70V
I
DRM
I
RRM
V
V
DRM
RRM
rated
rated
Tj = 25°CMAX.0.01mA
Tj = 125°CMAX.3
dV/dt *Linear slope up to
VD= 67% V
DRM
gate open
Tj = 125°CTYP.750500V/µs
MIN.500250
Unit
(dI/dt)c*Without snubberTj = 125°CTYP.3622A/ms
MIN.1811
* For either polarity of electrode A2voltage with reference to electrode A
1
2/6
PRODUCT INFORMATION
BTA20 BW/CW BTB20 BW/CW
I
Package
BTA
(Insulated)
BTB
(Uninsulated)
ORDERING INFORMATION
T(RMS)
AVBWCW
20600XX
Triac
Series
Insulation:
A: insulated
B: non insulated
Current: 20A
V
DRM/VRRM
700XX
600X
Sensitivity Specification
BT A 20 - 600 BW
Sensitivity
Voltage:
600: 600V
700: 700V
3/6
BTA20 BW/CW BTB20 BW/CW
Fig. 1: Maximum RMS power dissipation versus
RMS on-state current (F = 50Hz).(Curves are cut
off by (dI/dt)c limitation)
Fig. 3: Correlation between maximum RMS power
dissipation and maximum allowable temperatures
(Tamband Tcase) fordifferent thermal resistances
heatsink + contact (BTB).
Fig. 2: Correlation between maximum RMS power
dissipation and maximum allowable temperatures
(Tamb and Tcase) for different thermal resistances
heatsink + contact (BTA).
Fig. 4: RMS on-state current versus case temperature.
Fig. 5: Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
Zth(j-c)
0.1
0.01
1E-31E-21E-11E+01E+11E+2 5E+2
4/6
Zth(j-a)
tp(s)
Fig. 6: Relative variation of gate trigger current
and holding current versus junction temperature.
BTA20 BW/CW BTB20 BW/CW
Fig. 7: Non repetitive surge peak on-state current
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