Datasheet BTB16-800B, BTB16-700B, BTB16-600B, BTB16-400B, BTA16-800B Datasheet (SGS Thomson Microelectronics)

BTA16 B
BTB16 B

March 1995

STANDARDTRIACS

Symbol Parameter Value Unit

I

T(RMS)

RMS on-state current
(360° conduction angle)

BTA Tc = 80 °C16 A
BTB Tc = 90 °C

I

TSM

Non repetitive surge peak on-state current
( Tj initial = 25°C)

tp = 8.3 ms 170 A

tp = 10 ms 160

I2tI

2

t value tp = 10 ms 128 A2s

dI/dt Critical rate of rise of on-state current

Gate supply : IG= 500mA diG/dt = 1A/µs

Repetitive
F = 50 Hz

10 A/µs

Non

Repetitive

50

Tstg

Tj

Storage and operating junction temperature range - 40 to + 150

- 40 to + 125

°C
°C

Tl Maximum lead temperature for soldering during 10 s at 4.5 mm

from case

260 °C

TO220AB

(Plastic)

A1

A2

G

.HIGHSURGECURRENT CAPABILITY

.COMMUTATION : (dV/dt)c>10V/µs

.BTA Family :

INSULATINGVOLTAGE= 2500V

(RMS)

(ULRECOGNIZED: E81734)

DESCRIPTION

Symbol Parameter BTA / BTB16-... B Unit

400 600 700 800

V

DRM

V

RRM

Repetitive peak off-state voltage
Tj = 125 °C

400 600 700 800 V

ABSOLUTE RATINGS (limitingvalues)

FEATURES

The BTA/BTB16 B triac family are high perform­ance glass passivated PNPN devices.
These parts are suitables for general purpose ap­plications where high surge current capability is re­quired. Application such as phase control and
static switching on inductive or resistive load.

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GATECHARACTERISTICS (maximum values)

Symbol Parameter Value Unit

Rth (j-a) Junction to ambient 60 °C/W

Rth (j-c) DC Junction to case for DC BTA 2.9 °C/W

BTB 2.3

Rth (j-c) AC Junction to case for 360° conduction angle

( F= 50 Hz)

BTA 2.2 °C/W
BTB 1.75

Symbol Test Conditions Quadrant Suffix Unit

B

I

GT

VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 50 mA

IV MAX 100

V

GT

VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V

V

GD

VD=V

DRMRL

=3.3kΩ Tj=125°C I-II-III-IV MIN 0.2 V

tgt VD=V

DRMIG

= 500mA

dIG/dt = 3A/µs

Tj=25°C I-II-III-IV TYP 2 µs

I

L

IG=1.2 I

GT

Tj=25°C I-III-IV TYP 40 mA

II 70

IH*I

T

= 500mA gate open Tj=25°C MAX 50 mA

VTM*ITM= 22.5A tp= 380µs Tj=25°C MAX 1.6 V

I

DRM

I

RRM

V

DRM

Rated

V

RRM

Rated

Tj=25°C MAX 0.01 mA

Tj=125°C MAX 2

dV/dt * Linear slope up to VD=67%V

DRM

gate open

Tj=125°C MIN 250 V/µs

(dV/dt)c * (dI/dt)c = 7A/ms Tj=125°C MIN 10 V/µs

* For either polarity of electrode A2voltage with reference to electrode A1.

P

G (AV)

=1W PGM= 10W (tp = 20 µs) IGM=4A(tp=20µs) VGM= 16V (tp = 20 µs).

ELECTRICAL CHARACTERISTICS

THERMAL RESISTANCES

BTA16 B / BTB16 B

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Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)

Fig.3 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T

amb

and T

case

) for different thermal resistances heatsink +

contact (BTB).

Fig.4 : RMS on-state current versus case temperature.

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

0.01

0.1

1

Zth/Rth

Zth( j-c)

Zth(j-a)

tp(s)

Fig.5 : Relative variation of thermal impedance versus

pulse duration.

Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature.

Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T

amb

and T

case

) for different thermal resistances heatsink +

contact (BTA).

BTA16 B / BT B16 B

3/5

Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.

Fig.9 : On-state characteristics (maximum values).

Fig.7 : Non Repetitive surge peak on-state current

versus number of cycles.

BTA16 B / BTB16 B

4/5

PACKAGE MECHANICAL DATA

TO220AB Plastic

Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torquevalue : 1 m.N.

I

==

A

G

D

B

C

F

P

N

O

M

L

J

H

REF. DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 10.20 10.50 0.401 0.413
B 14.23 15.87 0.560 0.625
C 12.70 14.70 0.500 0.579
D 5.85 6.85 0.230 0.270
F 4.50 0.178
G 2.54 3.00 0.100 0.119
H 4.48 4.82 0.176 0.190

I 3.55 4.00 0.140 0.158

J 1.15 1.39 0.045 0.055
L 0.35 0.65 0.013 0.026
M 2.10 2.70 0.082 0.107
N 4.58 5.58 0.18 0.22
O 0.80 1.20 0.031 0.048
P 0.64 0.96 0.025 0.038

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted byimplication orotherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.

 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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BTA16 B / BT B16 B

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