SGS Thomson Microelectronics BTB06-800TW, BTB06-800SW, BTB06-800CW, BTB06-800C, BTB06-800BW Datasheet
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BTA/BTB06 Series
SNUBBERLESS™, LOGIC LEVEL & STANDARD 6A TRIACS
MAIN FEATURES:
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
G (Q1)
6A
600 and 800 V
5 to 50 mA
DESCRIPTION
Suitable for AC switching operations, the BTA/
BTB06 series can be used as an ON/OFF function
in applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control in light dimmers, motor speed
controllers,...
The snubberless and logic level versions (BTA/
BTB...W) are specially recommended for use on
inductive loads, than ks to their high com mutation
performances. By usin g an internal ceramic pa d,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
A1
A2
G
TO-220AB Insulated
(BTA06)
A2
G
A1
A2
A1
A2
G
TO-220AB
(BTB06)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
²
I
dI/dt
I
GM
P
G(AV)
T
stg
T
April 2002 - Ed: 5A
RMS on-state current (full sine wave) TO-220AB Tc = 110°C
TO-220AB Ins. Tc = 105°C
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
tI
²
t Value for fusing
Critical rate of rise of on-state current
I
= 2 x IGT , tr ≤ 100 ns
G
F = 50 Hz t = 20 ms 60 A
F = 60 Hz t = 16.7 ms 63
tp = 10 ms 21
F = 120 Hz Tj = 125°C 50 A/µs
Peak gate current tp = 20 µs Tj = 125°C 4 A
Average gate power dissipation Tj = 125°C 1 W
Storage junction temperature range
Operating junction temp erature range
j
- 40 to + 150
- 40 to + 125
6
A
A
°C
²
s
1/6
BTA/BTB06 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol Test Conditions Quadrant BTA/BTB06
TW SW CW BW
I
(1)
GT
V
V
GT
GD
= 12 V RL = 30 Ω
V
D
VD = V
RL = 3.3 kΩ
DRM
Tj = 125°C
I
(2)
H
I
L
dV/dt (2) V
= 100 mA
I
T
I
= 1.2 I
G
= 67 %V
D
GT
gate open
DRM
Tj = 125°C
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C MIN. 2.7 3.5 - - A/ms
(dV/dt)c = 10 V/µs Tj = 125°C 1.2 2.4 - Without snubber
■ ST ANDARD (4 Quadrants)
Tj = 125°C - - 3.5 5.3
Symbol Test Conditions Quadrant BTA/BTB06
(1)
I
G
V
GT
V
GD
I
(2)
H
I
L
dV/dt (2) V
= 12 V RL = 30 Ω
V
D
VD = V
= 500 mA
I
T
IG = 1.2 I
= 67 %V
D
RL = 3.3 kΩ Tj = 125°C
DRM
GT
DRM
gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c = 2.7 A/ms
I - II - III MAX. 5 10 35 50
I - II - III MAX. 1.3 V
I - II - III MIN. 0.2
MAX.10153550mA
I - III MAX. 10 25 50 70 mA
II 15 30 60 80
MIN. 20 40 400 1000 V/µs
CB
I - II - III
IV
MAX.
25
50
50
100
ALL MAX. 1.3 V
ALL MIN.
0.2 V
MAX. 25 50 mA
I - III - IV MAX. 40 50 mA
II 80 100
MIN. 200 400 V/µs
Tj = 125°C MIN. 5 10 V/µs
Unit
mA
V
Unit
mA
STATIC CHARACTERISTICS
Symbol Test Conditions Value Unit
V
(2) ITM = 5.5 A tp = 380 µs
T
(2)
V
to
(2)
R
d
I
DRM
I
RRM
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
Threshold voltage Tj = 125°C MAX. 0.85 V
Dynamic resistance Tj = 125°C MAX. 60 mΩ
V
= V
DRM
RRM
2/6
Tj = 25°C MAX. 1.55 V
Tj = 25°C
Tj = 125°C 1 mA
MAX.
5µA
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