SGS Thomson Microelectronics BTB04-600T, BTB04-600S, BTB04-400T, BTB04-400D, BTA04-400A Datasheet
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BTA04 T/D/S/A
®
FEATURES
Very low IGT= 10mA max
■
Low IH= 15mA max
■
BTA Family:
■
Insulating voltage = 2500V
(RMS)
(UL recognized: E81734)
DESCRIPTION
The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices.
These parts are suitables for general purpose applications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
BTB04 T/D/S/A
SENSITIVE GATE TRIACS
A2
G
A1
A1
A2
G
TO-220AB
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
2
I
dI/dt Critical rate of rise of on-state current
Tstg
Tj
Tl Maximum lead soldering temperature during 10s at 4.5mm from case 260 °C
Symbol Parameter
V
DRM
V
RRM
RMS on-state current (360° conduction angle) BTA Tc = 90°C 4 A
BTB Tc = 95°C
Non repetitive surge peak on-state current
(Tj initial = 25°C)
tI
2
t value tp = 10ms 8 A2s
Gate supply: I
Storage and operating junction temperature range -40 to +150
= 50mA dIG/dt = 0.1A/µs
G
400 T/D/S/A 600 T/D/S/A 700 T/D/S/A
Repetitive peak off-state voltage Tj = 110°C
tp = 8.3ms 42 A
tp = 10ms 40
Repetitive
F = 50Hz
Non repetitive 50
-40 to +110
BTA / BTB04-
400 600 700 V
10 A/µs
°C
Unit
September 2001 - Ed: 1A
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BTA04 T/D/S/A BTB04 T/D/S/A
THERMAL RESISTANCE
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC JunctiontocaseforDC BTA 4.4 °C/W
BTB 3.2
Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz) BTA 3.3 °C/W
BTB 2.4
GATE CHARACTERISTICS (maximum values)
P
ELECTRICAL CHARACTERISTICS
=1W PGM= 40W (tp = 20µs) IGM= 4A (tp = 20µs) VGM= 16V (tp = 20µs)
G(AV)
Symbol Test conditions Quadrant
BTA / BTB04
TDSA
I
GT
VD= 12V (DC) RL=33Ω Tj = 25°C I - II - III MAX. 5 5 10 10 mA
IV MAX. 5 10 10 25
V
GT
V
GD
tgt VD=V
I
VD= 12V (DC) RL=33Ω Tj = 25°C I - II - III - IV MAX. 1.5 V
VD=V
DRM
DRMIG
dI
/dt = 0.5A/µs
G
IG= 1.2I
L
GT
RL= 3.3kΩ Tj =110°C I - II - III - IV MIN. 0.2 V
= 40mA
Tj = 25°C I - II-III-IV TYP. 2 µs
Tj = 25°C I - III - IV TYP. 10 10 20 20 mA
II 20 20 40 40
*I
I
H
= 100mA Gate open Tj = 25°C MAX. 15 15 25 25 mA
T
VTM*ITM= 5.5A tp = 380µs Tj = 25°C MAX. 1.65 V
I
DRM
I
RRM
V
V
DRM
RRM
rated
rated
Tj = 25°C MAX. 0.01 mA
Tj = 110°C MAX. 0.75
dV/dt * Linearslopeupto
VD= 67% V
DRM
gate open
Tj = 110°C TYP. 10 10 - - V/µs
MIN. - - 10 10
Unit
(dI/dt)c* (dI/dt)c = 1.8A/ms Tj = 110°C TYP. 1 1 5 5 V/µs
* For either polarity of electrode A2voltage with reference to electrode A
1
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