SGS Thomson Microelectronics BTA40-800B, BTA40-800A, BTA40-700B, BTA40-700A, BTA40-600B Datasheet
...
BTA40 A/B
March 1995
STANDARDTRIACS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(360° conduction angle)
Tc = 75 °C40 A
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25°C)
tp = 8.3 ms 315 A
tp = 10 ms 300
I2tI
2
t value tp = 10 ms 450 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
10 A/µs
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 125
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260 °C
RD91
(Plastic)
.HIGHSURGECURRENT CAPABILITY
.COMMUTATION : (dV/dt)c>10V/µs
.BTA Family :
INSULATINGVOLTAGE= 2500V
(RMS)
(ULRECOGNIZED: E81734)
DESCRIPTION
Symbol Parameter BTA40-... A/B Unit
400 600 700 800
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125 °C
400 600 700 800 V
ABSOLUTE RATINGS (limitingvalues)
FEATURES
The BTA40 A/B triac family are high performance
glass passivated PNPN devices.
These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and
static switching on inductive or resistiveload.
A
2
G
A
1
1/5
GATECHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-c) DC Junction to case for DC 1.2 °C/W
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 0.9 °C/W
Symbol Test Conditions Quadrant Suffix Unit
AB
IGTVD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 100 50 mA
IV MAX 150 100
V
GT
VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V
V
GD
VD=V
DRMRL
=3.3kΩ Tj=125°C I-II-III-IV MIN 0.2 V
tgt VD=V
DRMIG
= 500mA
dIG/dt = 3A/µs
Tj=25°C I-II-III-IV TYP 2.5 µs
I
L
IG=1.2 I
GT
Tj=25°C I-III-IV TYP 70 60 mA
II 200 180
IH*I
T
= 500mA gate open Tj=25°C MAX 100 80 mA
VTM*ITM= 60A tp= 380µs Tj=25°C MAX 1.8 V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25°C MAX 0.01 mA
Tj=125°C MAX 6
dV/dt * Linear slope up to VD=67%V
DRM
gate open
Tj=125°C MIN 250 V/µs
(dV/dt)c * (dI/dt)c = 18A/ms Tj=125°C MIN 10 V/µs
* For either polarity of electrode A2voltage with reference to electrode A1.
P
G (AV)
=1W PGM= 40W (tp = 20 µs) IGM=8A(tp=20µs) VGM= 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA40 A/B
2/5
ORDERING INFORMATION
Package I
T(RMS)
V
DRM/VRRM
Sensitivity Specification
AV A B
BTA
(Insulated)
40 400 X X
600 X X
700 X X
800 X X
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T
amb
and T
case
) for different thermal resistances heatsink +
contact.
Fig.3 : RMS on-state current versus case temperature.
tp(s )
1E-3 1E-2 1E-1 1E+0 1E+1
0.01
0.1
1
Zth(j-c)/Rth(j-c)
Fig.4 : relative variation of thermal impedance junction
to case versus pulse duration.
BTA40 A/ B
3/5
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non Repetitive surge peak on-state current
versus number of cycles.
Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum values).
BTA40 A/B
4/5
PACKAGE MECHANICAL DATA
RD91 Plastic
Marking : type number
Weight : 20 g
A
a1
a2
B
d1
b2
C
c1c2
E
F
I
LIL2
N1
N2
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 40.00 1.575
a1 29.90 30.30 1.177 1.193
a2 22.00 0.867
B 27.00 1.063
b1 13.50 16.50 0.531 0.650
b2 24.00 0.945
C 14.00 0.551
c1 3.50 0.138
c2 1.95 3.00 0.077 0.118
E 0.70 0.90 0.027 0.035
F 4.00 4.50 0.157 0.177
I 11.20 13.60 0.441 0.535
L1 3.10 3.50 0.122 0.138
L2 1.70 1.90 0.067 0.075
N1 33° 43° 33° 43°
N2 28° 38° 28° 38°
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. Nolicense is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - Allrights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
BTA40 A/ B
5/5
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