SGS Thomson Microelectronics BTB16-800B, BTB16-700B, BTB16-600B, BTB16-400B, BTA16-800B Datasheet
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BTA16 B
BTB16 B
March 1995
STANDARDTRIACS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(360° conduction angle)
BTA Tc = 80 °C16 A
BTB Tc = 90 °C
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25°C)
tp = 8.3 ms 170 A
tp = 10 ms 160
I2tI
2
t value tp = 10 ms 128 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
10 A/µs
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 125
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260 °C
TO220AB
(Plastic)
A1
A2
G
.HIGHSURGECURRENT CAPABILITY
.COMMUTATION : (dV/dt)c>10V/µs
.BTA Family :
INSULATINGVOLTAGE= 2500V
(RMS)
(ULRECOGNIZED: E81734)
DESCRIPTION
Symbol Parameter BTA / BTB16-... B Unit
400 600 700 800
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125 °C
400 600 700 800 V
ABSOLUTE RATINGS (limitingvalues)
FEATURES
The BTA/BTB16 B triac family are high performance glass passivated PNPN devices.
These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and
static switching on inductive or resistive load.
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GATECHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC BTA 2.9 °C/W
BTB 2.3
Rth (j-c) AC Junction to case for 360° conduction angle
( F= 50 Hz)
BTA 2.2 °C/W
BTB 1.75
Symbol Test Conditions Quadrant Suffix Unit
B
I
GT
VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 50 mA
IV MAX 100
V
GT
VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V
V
GD
VD=V
DRMRL
=3.3kΩ Tj=125°C I-II-III-IV MIN 0.2 V
tgt VD=V
DRMIG
= 500mA
dIG/dt = 3A/µs
Tj=25°C I-II-III-IV TYP 2 µs
I
L
IG=1.2 I
GT
Tj=25°C I-III-IV TYP 40 mA
II 70
IH*I
T
= 500mA gate open Tj=25°C MAX 50 mA
VTM*ITM= 22.5A tp= 380µs Tj=25°C MAX 1.6 V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25°C MAX 0.01 mA
Tj=125°C MAX 2
dV/dt * Linear slope up to VD=67%V
DRM
gate open
Tj=125°C MIN 250 V/µs
(dV/dt)c * (dI/dt)c = 7A/ms Tj=125°C MIN 10 V/µs
* For either polarity of electrode A2voltage with reference to electrode A1.
P
G (AV)
=1W PGM= 10W (tp = 20 µs) IGM=4A(tp=20µs) VGM= 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA16 B / BTB16 B
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