®
BTA/BTB12 and T12 Series
SNUBBERLESS™, LOGIC LEVEL & STANDARD 12A TRIACS
MAIN FEATURES:
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT (Q1)
12 A
600 and 800 V
10 to 50 mA
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB12 and T1 2 triac series is
suitable for general purpose AC sw itching. They
can be used as an ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control operation in light dimmers, motor
speed controllers,...
The snubberless versions (BTA/BTB...W and T12
series) are specially recommended for use on
inductive loads, than ks to their high com mutation
performances. By usin g an internal ceramic pa d,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
A1
A1
A2
G
TO-220AB Insulated
(BTA12)
A2
G
A1
A2
G
D2PAK
(T12-G)
A1
A2
A2
G
A2
TO-220AB
(BTB12)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
²
I
dI/dt
V
DSM/VRSM
I
GM
P
G(AV)
T
stg
T
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
tI
²
t Value for fusing
Critical rate of rise of on-state current
I
= 2 x IGT , tr ≤ 100 ns
G
Non repetitive surge peak off-state
voltage
Peak gate current tp = 20 µs Tj = 125°C 4 A
Average gate power dissipation Tj = 125°C 1 W
Storage junction temperature range
Operating junction temp erature range
j
September 2000 - Ed: 3
²
PAK/TO-220AB
D
Tc = 105°C
12 A
TO-220AB Ins. Tc = 90°C
F = 50 Hz t = 20 ms 120 A
F = 60 Hz t = 16.7 ms 126
tp = 10 ms 100
F = 120 Hz Tj = 125°C 50 A/µs
V
tp = 10 ms Tj = 25°C
DRM/VRRM
+ 100
- 40 to + 150
- 40 to + 125
A
V
°C
²
s
1/7
BTA/BTB12 and T12 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol Test Conditions Quadrant T 12 BTA/BTB12
T1235 SW CW BW
I
(1)
GT
V
V
GT
GD
= 12 V RL = 30 Ω
V
D
VD = V
RL = 3.3 kΩ
DRM
Tj = 125°C
I
(2)
H
I
L
dV/dt (2) V
= 100 mA
I
T
I
= 1.2 I
G
= 67 %V
D
GT
gate open
DRM
Tj = 125°C
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C MIN. - 6.5 - - A/ms
(dV/dt)c = 10 V/µs Tj = 125°C - 2.9 - Without snubber Tj = 125°C 6.5 - 6.5 12
■ ST ANDARD (4 Quadrants)
Symbol Test Conditions Quadrant BTA/BTB06
I
(1)
GT
V
GT
V
GD
I
(2)
H
I
L
dV/dt (2) V
= 12 V RL = 30 Ω
V
D
VD = V
= 500 mA
I
T
IG = 1.2 I
= 67 %V
D
RL = 3.3 kΩ Tj = 125°C
DRM
GT
DRM
gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c = 5.3 A/ms Tj = 125°C MIN. 5 10 V/µs
I - II - III MAX. 35 10 35 50
I - II - III MAX. 1.3 V
I - II - III MIN. 0.2
MAX.35153550mA
I - III MAX. 50 25 50 70 mA
II 60 30 60 80
MIN. 500 40 500 1000 V/µs
CB
I - II - III
IV
MAX.
25
50
50
100
ALL MAX. 1.3 V
ALL MIN.
0.2 V
MAX. 25 50 mA
I - III - IV MAX. 40 50 mA
II 80 100
MIN. 200 400 V/µs
Unit
mA
V
Unit
mA
STATIC CHARACTERISTI CS
Symbol Test Conditions Value Unit
V
(2) ITM = 17 A tp = 380 µs
T
(2)
V
to
(2)
R
d
I
DRM
I
RRM
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
Threshold voltage Tj = 125°C MAX. 0.85 V
Dynamic resistance Tj = 125°C MAX. 35 mΩ
V
= V
DRM
RRM
2/7
Tj = 25°C MAX. 1.55 V
Tj = 25°C
Tj = 125°C 1 mA
MAX.
5µA
BTA/BTB12 and T12 Series
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
R
th(j-a)
S = Copper surface under tab
Junction to case (AC)
Junction to ambient
PRODUCT SELECTOR
S = 1 cm
²
²
PAK/TO-220AB
D
TO-220AB Insulated 2.3
D²PAK
TO-220AB
TO-220AB Insulated
1.4
45
60
°C/W
°C/W
Part Number
BTA/BTB12-xxxB X X 50 mA Standard TO-220AB
BTA/BTB12-xxxBW X X 50 mA Snubberless TO-220AB
BTA/BTB12-xxxC X X 25 mA Standard TO-220AB
BTA/BTB12-xxxCW X X 35 mA Snubberless TO-220AB
BTA/BTB12-xxxSW X X 10 mA Logic level TO-220AB
T1235-xxxG X X 35 mA Snubberless
BTB: non insulated TO-220AB package
Voltage (xxx)
Sensitivity Type
600 V 800 V
Package
²
D
PAK
ORDERING INFORMATION
BT A 12 - 600 BW
TRIAC
SERIES
SENSITIVITY &TYPE
INSULATION:
A: insulated
B: non insulated
CURRENT:12A
VOLTAGE:
600: 600V
800: 800V
B: 50mA STANDARD
BW: 50mA SNUBBERLESS
C: 25mA STANDARD
CW: 35mA SNUBBERLESS
SW: 10mA LOGIC LEVEL
TRIAC
SERIES
CURRENT:12A
T 12 35 - 600 G (-TR)
PACKAGE:
2
G: D PAK
VOLTAGE:
600: 600V
800: 800V
SENSITIVITY:
35: 35mA
PACKING MODE:
Blank:Tube
-TR:Tape & Reel
3/7
BTA/BTB12 and T12 Series
OTHER INFORMATION
Part Number Marking Weight
Base
quantity
Packing
mode
BTA/BTB12-xxxyz BTA/BTB12-xxxyz 2.3 g 250 Bulk
T1235-xxxG T1235xxxG 1.5 g 50 Tube
T1235-xxxG-TR T1235xxxG 1.5 g 1000 Tape & reel
Note: xxx = voltage, yy = sensitivity, z = type
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
P (W)
6
4
2
0
8
6
4
2
0
0123456789101112
IT(RMS)(A)
Fig. 2-1: RMS on-state current versus case
temperature (full cycle).
IT(RMS) (A)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125
Tc(°C)
BTB/T12
BTA
Fig. 2-2: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm),full cycle.
IT(RMS) (A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 25 50 75 100 125
Tamb(°C)
2
DPAK
(S=1cm )
2
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
1E+0
Zth(j-c)
1E-1
1E-2
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Zth(j-a)
tp(s)
4/7
BTA/BTB12 and T12 Series
Fig. 4: On-state characteristics (maximum
values).
ITM (A)
100
Tj max
10
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Tj=25°C
VTM(V)
Tj max.
Vto = 0.85 V
Rd = 35 m
Ω
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
1000
100
dI/dt limitation:
50A/µs
Tj initial=25°C
ITSM
I²t
Fig. 5: Surge peak on-state current versus
number of cycles.
ITSM (A)
130
120
110
100
90
80
Non repetitive
Tj initial=25°C
t=20ms
One cycle
70
60
50
40
Repetitive
Tc=90°C
30
20
10
0
1 10 100 1000
Number of cycles
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
1.5
1.0
IGT
IH & IL
tp (ms)
10
0.01 0.10 1.00 10.00
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.8
SW
2.4
2.0
C
1.6
B
1.2
0.8
0.4
0.0
0.1 1.0 10.0 100.0
(dV/dt)c (V/µs)
BW/CW/T1235
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
0
0 25 50 75 100 125
Tj (°C)
5/7
BTA/BTB12 and T12 Series
Fig. 10: D²PAK Thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0 4 8 1216202428323640
S(cm²)
PACKAGE MECHANICAL DATA
D²PAK (Plastic)
D²PAK
DIMENSIONS
A
L2
L
L3
E
B2
B
G
2.0 MIN.
FLAT ZONE
C2
A1
C
A2
FOOTPRINT DIMENSIONS (in millimete r s )
D²PAK (Plastic)
16.90
R
V2
REF .
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.30 4.60 0.169 0.181
A1 2.49 2.69 0.098 0.106
D
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.25 1.40 0.048 0.055
C 0.45 0.60 0.017 0.024
C2 1.21 1.36 0.047 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.28 0.393 0.405
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
R 0.40 0.016
V2 0° 8° 0° 8°
6/7
10.30
8.90
5.08
1.30
3.70
PACKAGE MECHANICAL DATA
TO-220 AB / TO-220AB Ins.
B
L
I
A
l4
a1
l3
l2
a2
b1
e
BTA/BTB12 and T12 Series
DIMENSIONS
C
b2
REF.
A 15.20 15.90 0.598 0.625
F
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c2
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
M
c1
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
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to change wi t hout notice. Thi s publication supersede s and replaces all in formation prev i ously supplied. STMicroel ectronics products are not
authori zed for use as cr i tical components in life sup port devices or systems wit hout express w ri tten approval of STMicroelectronics.
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