SGS Thomson Microelectronics BTB06-T, BTB06-S, BTB06-D, BTA06-T, BTA06-S Datasheet

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BTA0 6 T/D /S/ A BTB0 6 T/D /S/ A
March 1995
SENSITIVE GATE TRIACS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (360° conduction angle)
I
TSM
Non repetitive surge peak on-state current ( Tj initial = 25°C)
tp = 8.3 ms 63 A
tp = 10 ms 60
I2tI
2
t value tp = 10 ms 18 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 50mA diG/dt = 0.1A/µs
Repetitive F = 50 Hz
10 A/µs
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 110
°C °C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260 °C
TO220AB
(Plastic)
.VERYLOWI
GT
=10mA max
.LOW I
H
= 15mAmax
.BTA Family :
INSULATINGVOLTAGE= 2500V
(RMS)
(ULRECOGNIZED: E81734)
DESCRIPTION
Symbol Parameter BTA / BTB06- Unit
400 T/D/S/A 600 T/D/S/A 700 T/D/S/A
V
DRM
V
RRM
Repetitive peak off-state voltage Tj = 110°C
400 600 700 V
ABSOLUTE RATINGS (limitingvalues)
FEATURES
The BTA/BTB06 T/D/S/A triac family are high per­formance glass passivated PNPN devices. These parts are suitables for general purpose ap­plications where gate high sensitivity is required. Application on 4Q such as phase control and static switching.
A1
A2
G
1/5
GATE CHARACTERISTICS (maximumvalues)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W
BTB 3.2
Rth (j-c) AC Junction to case for360° conduction angle
( F= 50 Hz)
BTA 3.3 °C/W BTB 2.4
Symbol Test Conditions Quadrant Suffix Unit
TDSA
IGTVD=12V (DC) RL=33 Tj=25°C I-II-III MAX 5 5 10 10 mA
IV MAX 5 10 10 25
V
GT
VD=12V (DC) RL=33 Tj=25°C I-II-III-IV MAX 1.5 V
V
GD
VD=V
DRMRL
=3.3k Tj=110°C I-II-III-IV MIN 0.2 V
tgt VD=V
DRMIG
= 40mA
dIG/dt = 0.5A/µs
Tj=25°C I-II-III-IV TYP 2 µs
I
L
IG= 1.2 I
GT
Tj=25°C I-III-IV TYP 10 10 20 20 mA
II 20 20 40 40
IH*I
T
= 100mA gate open Tj=25°C MAX 15 15 25 25 mA
VTM*ITM= 8.5A tp= 380µs Tj=25°C MAX 1.65 V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25°C MAX 0.01 mA
Tj=110°C MAX 0.75
dV/dt * Linear slope up to
VD=67%V
DRM
gate open
Tj=110°C TYP 10 10 - - V/µs
MIN - - 10 10
(dV/dt)c * (dI/dt)c = 2.7A/ms Tj=110°C TYP 1 1 5 5 V/µs
* For either polarity of electrode A2voltage with reference to electrode A1.
P
G (AV)
=1W PGM= 10W (tp = 20 µs) IGM= 4A (tp = 20 µs) VGM= 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA06 T/D/S/A / BTB06 T/D/S/A
2/5
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