Datasheet BTA06-600GP, BTA06-400GP Datasheet (SGS Thomson Microelectronics)

BTA06 GP

March 1995

TRIACS

Symbol Parameter Value Unit

I

T(RMS)

RMS on-state current
(360° conduction angle)

Tc = 105 °C6 A

I

TSM

Non repetitive surge peak on-state current
( Tj initial = 25°C)

tp = 8.3 ms 105 A

tp = 10 ms 100

I2tI

2

t value tp = 10 ms 50 A2s

dI/dt Critical rate of rise of on-state current

Gate supply : IG= 500mA diG/dt = 1A/µs

Repetitive
F = 50 Hz

10 A/µs

Non

Repetitive

50

Tstg

Tj

Storage and operating junction temperature range - 40 to + 150

- 40 to + 125

°C
°C

Tl Maximum lead temperature for soldering during 10 s at 4.5 mm

from case

260 °C

TO220AB

(Plastic)

A1

A2

G

.LOWI

H

= 13mAmax

.HIGHSURGECURRENT : I

TSM

=100A

.I

GT

SPECIFIEDINFOURQUADRANTS

.INSULATINGVOLTAGE=2500V

(RMS)

(ULRECOGNIZED: E81734)

DESCRIPTION

Symbol Parameter BTA06- Unit

400 GP 600 GP

V

DRM

V

RRM

Repetitive peak off-state voltage
Tj = 125 °C

400 600 V

ABSOLUTE RATINGS (limitingvalues)

FEATURES

The BTA06 GP’s use high performance,glass pas­sivated chips.
The insulated TO220AB package, the high surge
current and low holding current make this family
well adapted to LIGHT DIMMER applications.

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GATECHARACTERISTICS (maximum values)

Symbol Parameter Value Unit

Rth (j-a) Junction to ambient 60 °C/W

Rth (j-c) DC Junction to case for DC 4 °C/W

Rth (j-c) AC Junction to case for 360° conduction angle

( F= 50 Hz)

3 °C/W

Symbol Test Conditions Quadrant Suffix Unit

GP

I

GT

VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 50 mA

IV MAX 75

V

GT

VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V

V

GD

VD=V

DRMRL

=3.3kΩ Tj=110°C I-II-III-IV MIN 0.2 V

tgt VD=V

DRMIG

= 500mA

dIG/dt = 3A/µs

Tj=25°C I-II-III-IV TYP 2 µs

I

L

IG=1.2 I

GT

Tj=25°C I-III-IV TYP 20 mA

II 40

IH*I

T

= 100mA gate open Tj=25°C MAX 13 mA

VTM*ITM= 8.5A tp= 380µs Tj=25°C MAX 1.4 V

I

DRM

I

RRM

V

DRM

Rated

V

RRM

Rated

Tj=25°C MAX 0.01 mA

Tj=110°C MAX 0.5

dV/dt * Linear slope up to VD=67%V

DRM

gate open

Tj=110°C MIN 30 V/µs

TYP 100

(dV/dt)c * (dI/dt)c= 1.8A/ms Tj=110°C MIN 1 V/µs

TYP 10

* For either polarity of electrode A2voltage with reference to electrode A1.

P

G (AV)

=1W PGM= 10W (tp = 20 µs) IGM=4A(tp=20µs) VGM= 16V (tp = 20 µs).

ELECTRICAL CHARACTERISTICS

THERMAL RESISTANCES

BTA06 GP

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0123456

0

1

2

3

4

5

6

7

180

O

= 180

o

=120

o

=90

o

=60

o

=30

o

T(RMS)

I (A)

P(W)

Fig.1 : Maximum RMS power dissipation versus RMS

on-state current (F=50Hz).
(curves are cut off by (dI/dt)c limitation)

0 20 40 60 80 100 120 140

0

1

2

3

4

5

6

7

-105

-110

-115

-120

-125

P(W)

Rth = 0 C/W

2.5 C/W
5 C/W

10 C/W

o

o

o

o

Tamb ( C)

o

Tcase ( C)

o

Fig.2 : Correlation between maximum RMS power

dissipation and maximum allowable temperatures (T

amb

and T

case

) for different thermal resistances heatsink +

contact.

0 10 20 30 40 50 60 70 80 90 100 110 120130

0

1

2

3

4

5

6

7

=180

o

Tcase( C)

o

I (A)

T(RMS)

Fig.3 : RMS on-state current versus case temperature.

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

0.01

0.1

1

Zth/Rth

Zth( j-c)

Zth( j-a)

tp(s )

Fig.4 : Relative variation of thermal impedance versus

pulse duration.

Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.

Fig.6 : Non Repetitive surge peak on-state current
versus number of cycles.

BTA06 GP

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Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.

Fig.8 : On-state characteristics (maximum values).

Cooling method : C
Marking : type number
Weight : 2.3 g

Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.

I

==

A

G

D

B

C

F

P

N

O

M

L

J

H

REF. DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 10.20 10.50 0.401 0.413
B 14.23 15.87 0.560 0.625
C 12.70 14.70 0.500 0.579
D 5.85 6.85 0.230 0.270
F 4.50 0.178
G 2.54 3.00 0.100 0.119
H 4.48 4.82 0.176 0.190

I 3.55 4.00 0.140 0.158

J 1.15 1.39 0.045 0.055

L 0.35 0.65 0.013 0.026

M 2.10 2.70 0.082 0.107

N 4.58 5.58 0.18 0.22
O 0.80 1.20 0.031 0.048
P 0.64 0.96 0.025 0.038

PACKAGE MECHANICAL DATA

TO220AB Plastic

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication orotherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.

 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.

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BTA06 GP

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