SGS Thomson Microelectronics BTA06-600GP, BTA06-400GP Datasheet
BTA06 GP
March 1995
TRIACS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(360° conduction angle)
Tc = 105 °C6 A
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25°C)
tp = 8.3 ms 105 A
tp = 10 ms 100
I2tI
2
t value tp = 10 ms 50 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
10 A/µs
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 125
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260 °C
TO220AB
(Plastic)
A1
A2
G
.LOWI
H
= 13mAmax
.HIGHSURGECURRENT : I
TSM
=100A
.I
GT
SPECIFIEDINFOURQUADRANTS
.INSULATINGVOLTAGE=2500V
(RMS)
(ULRECOGNIZED: E81734)
DESCRIPTION
Symbol Parameter BTA06- Unit
400 GP 600 GP
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125 °C
400 600 V
ABSOLUTE RATINGS (limitingvalues)
FEATURES
The BTA06 GP’s use high performance,glass passivated chips.
The insulated TO220AB package, the high surge
current and low holding current make this family
well adapted to LIGHT DIMMER applications.
1/4
GATECHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC 4 °C/W
Rth (j-c) AC Junction to case for 360° conduction angle
( F= 50 Hz)
3 °C/W
Symbol Test Conditions Quadrant Suffix Unit
GP
I
GT
VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 50 mA
IV MAX 75
V
GT
VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V
V
GD
VD=V
DRMRL
=3.3kΩ Tj=110°C I-II-III-IV MIN 0.2 V
tgt VD=V
DRMIG
= 500mA
dIG/dt = 3A/µs
Tj=25°C I-II-III-IV TYP 2 µs
I
L
IG=1.2 I
GT
Tj=25°C I-III-IV TYP 20 mA
II 40
IH*I
T
= 100mA gate open Tj=25°C MAX 13 mA
VTM*ITM= 8.5A tp= 380µs Tj=25°C MAX 1.4 V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25°C MAX 0.01 mA
Tj=110°C MAX 0.5
dV/dt * Linear slope up to VD=67%V
DRM
gate open
Tj=110°C MIN 30 V/µs
TYP 100
(dV/dt)c * (dI/dt)c= 1.8A/ms Tj=110°C MIN 1 V/µs
TYP 10
* For either polarity of electrode A2voltage with reference to electrode A1.
P
G (AV)
=1W PGM= 10W (tp = 20 µs) IGM=4A(tp=20µs) VGM= 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA06 GP
2/4
Loading...