SGS Thomson Microelectronics BSP30 Datasheet

■ SILICON EPI TAX IA L PLANAR PNP

TRANSISTORS

■ MINIATURE PLASTIC PACKAGE FOR

APPLICAT ION IN SURFACE MOUNT ING
CIRCUITS

■ GENERAL P URPOSE MAINLY INT ENDED

FOR USE IN MEDIUM P OWER INDUSTRIA L
APPLICAT ION AND FOR AUDI O AMP LIFIER
OUTPUT STAGE

■ NPN COMPLEMENTS ARE BSP40, BSP41,

BSP42 AND BSP43 RE SP ECT IVE LY

BSP30/31
BSP32/33

MEDIUM POWER AMPLIFIER

ADVANCE DATA

2

3

2

1

SOT-223

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

BSP30/BSP31 BSP32/BSP33

V
V
V
V

P
T

Collector-Base Voltage (IE = 0) -70 -90 V

CBO

Collector-Emitter Voltage (IB = 0) -60 -80 V

CEO

Collector-Emitter Voltage (RBE = 1KΩ)-70-90V

CES

Emitter-Base Voltage (IC = 0) -5 V

EBO

Collector Current -1 A

I

C

Base Current -0.1 A

I

B

Total Dissipation at Tc = 25 oC2W

tot

Storage Temperature -65 to 150

stg

Max. Operating Junction Temperature 150

T

j

o

C

o

C

October 1995

1/4

BSP30/31/32/33

THERMAL DATA

R
R

• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm

thj-amb
thj-tab

•

Thermal Resistance Junction-Ambient Max

•

Thermal Resistance Junction-Collecor Tab Max

62.5
8

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CBO

V

(BR)CBO

V

(BR)CEO

V

(BR)CES

V

(BR)EBO

Collector Cut-off
Current (I

= 0)

E

Collector-Base
Breakdown Voltage
(IE = 0)

∗ Collector-Emitter

Breakdown Voltage
(I

= 0)

B

Collector-Emitter
Breakdown Voltage
(V

= 0)

BE

Emitter-Base

= -60 V

V

CB

V

= -60 V Tj = 150 oC

CB

I

= -100 µA

C

for BSP30/BSP31
for BSP32/BSP33

I

= -10 mA

C

for BSP30/BSP31
for BSP32/BSP33

I

= -10 µA

C

for BSP30/BSP31
for BSP32/BSP33

I

= -10 µA -5 V

C

-70

-90

-60

-80

-70

-90

-100

-50

Breakdown Voltage
(I

= 0)

C

V

∗ Collector-Emitter

CE(sat)

Saturation Voltage

V

∗ Base-Emitter

BE(sat)

Saturation Voltage

h

∗ DC Current Gain for BSP30/BSP31

FE

IC = -150 mA IB = -15 mA
I

= -500 mA IB = -50 mA

C

IC = -150 mA IB = -15 mA
I

= -500 mA IB = -50 mA

C

I

= -100 µA VCE = -5 V

C

I

= -100 mA VCE = -5 V

C

I

= -500 mA VCE = -5 V

C

10
40
30

-0.25

-0.5

-1

-1.2

120

for BSP32/BSP33
I

= -100 µA VCE = -5 V

C

I

= -100 mA VCE = -5 V

C

I

= -500 mA VCE = -5 V

C

f

C

CBO

Transition Frequency IC = -50 mA VCE = -10 V f = 35 MHz 100 MHz

T

Collector-Base

IE = 0 VCB = -10 V f = 1 MHz 20 pF

30
50
50

300

Capacitance

C

EBO

Emitter-Base

IC = 0 VEB = -0.5 V f = 1 MHz 120 pF

Capacitance

t

t

∗ Pulsed: Pulse durat ion = 300 µs, dut y cycl e ≤ 1.5 %

Turn-on Time IC = -100 mA IB1 = -IB2 = -5 mA 500 ns

on

Turn-on Time 650 ns

off

nA
µA

V
V

V
V

V
V

V
V

V
V

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