SGS Thomson Microelectronics BDX53BFP Datasheet
®
SILICON POWER DARLINGTON TRANSISTOR
APPLICATIONS:
■ GENERAL PURPO SE SWITCHING AND
AMPLIFIER
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
■ FULLY INSULAT E D PACKA G E (U.L.
COMPLIANT) FOR EASY MOUNTING
DESCRIPTION
The BDX53BFP is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in T0-220FP fully molded
isolated package. It is intented for use in hammer
drivers, audio amplifiers and other medium power
linear and switching applications.
BDX53BFP
3
2
1
T0-220FP
INTER NAL SCH E M ATI C DIAG RA M
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
V
T
Collector-Base Voltage (IE = 0) 80 V
CBO
Collector-Emitter Voltage (IB = 0) 80 V
CEO
Emitter-base Voltage (IC = 0) 5 V
EBO
I
Collector Current 8 A
C
Collector Peak Current (repetitive) 12 A
CM
Base Current 0.2 A
I
B
Total Dissipation at Tc ≤ 25 oC
tot
Insulation Withstand Voltage (RMS) from All
isol
29 W
1500 V
Three Leads to External Heatsink
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
February 2003
1/4
BDX53BF P
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
4.3
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 80 V 0.2 mA
V
CB
= 40 V 0.5 mA
V
CE
V
EB
= 5 V
2mA
I
= 100 mA 80 V
C
Sustaining Voltage
(I
= 0)
B
∗ Collector-emitter
V
CE(sat)
IC = 3 A IB =12 mA 2 V
Saturation Voltage
V
∗ Base-emitter
BE(sat)
IC = 3 A IB =12 mA 2.5 V
Saturation Voltage
∗ DC Current Gain IC = 3 A VCE = 3 V 750
h
FE
VF∗ Parallel Diode Forward
Voltage
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IF = 3 A
I
= 8 A
F
1.8
2.5
2.5 V
V
Safe Operating Are a
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