SGS Thomson Microelectronics BDX34C, BDX34B, BDX33C, BDX33B Datasheet
BDX33B BDX33C
COMPLEMENTARY SILICON POWER
DESCRIPTION
The BDX33B and BDX33C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plasticpackage. They are intented
for use in power linear and switching applications.
The complementary PNP types are BDX34Band
BDX34Crespectively.
BDX34B BDX34C
DARLINGTON TRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1Typ. = 10 KΩ R2Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Unit
NPN BDX33 B BDX 33C
PNP BDX34B BDX34C
V
V
I
P
T
For PNP types voltage andcurrentvalues are negative.
Collec t or -Base Voltage (IE= 0 ) 80 100 V
CBO
Collec t or -Emitter Voltage (IB= 0) 80 100 V
CEO
Collector Current 10 A
I
C
Collector Peak Current 15 A
CM
Base Current 0.25 A
I
B
Tot al Dissipat ion at Tc≤ 25 oC
tot
St orage Tempe rat ure -65 t o 150
stg
Max. O perating Junction Temperat ure 150
T
j
70 W
o
C
o
C
October 1999
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BDX33B BDX33CBDX34B BDX34C
THERMAL DATA
R
thj-case
Ther mal Resist anc e Junc t ion-case 1.78
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
Symbol Parameter Test Condi tions Mi n. Typ . Max. U n it
I
CBO
I
CEO
I
EBO
V
CEO(sus)
V
CER(sus)
V
CEV(su s)
V
CE(sat)
Collect o r Cut- off Curr ent
=0)
(I
E
Collect o r Cut- off Curr ent
(I
=0)
B
Emitter Cut-off Current
=0)
(I
C
Collector-Emitter Sustaining
∗
Voltage ( I
Collect o r- emit ter Sust aining
∗
Voltage ( R
B
=0)
BE
=100 Ω)
∗ Collect or-emitter Sust ain ing
Voltage ( V
=-1.5 V)
BE
∗ Collecto r- emit ter Sat uration
BDX33B/ 3 4B
for
for BDX33C/34C V
= 100oC
T
case
for BDX33B/34B V
BDX33C /3 4C VCB=100V
for
BDX33B/ 3 4B
for
for BDX33C/34C V
= 100oC
T
case
for BDX33B/34B V
BDX33C/ 3 4C
for
V
=5V 5 mA
EB
I
=100 mA for BD X 33B /3 4B
C
V
V
V
CB
CB
=80V
CB
CE
CE
CE
CE
=80V
= 100V
=40V
= 50V
=40V
=50V
for B DX33C/34C80100
I
= 100 mA fo r BDX33 B/ 34B
C
I
= 100 mA fo r BDX33B /3 4B
C
BDX33C/ 3 4C
for
BDX33C/34C
for
80
100
80
100
IC=3A IB=6mA 2.5 V
0.2
0.2
5
5
0.5
0.5
10
10
Voltage
V
h
BE
FE
V
Base- emitter V ol t age I
∗
∗ DC Current G ain IC=3A VCE= 3 V 750 V
∗ Parallel-Diode Forwar d
F
=3A VCE=3V 2.5 V
C
IF=8A 4 V
Voltage
h
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
SmallSignalCurrentGain IC=1A VCE=5V f=1MHz 100
fe
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
SafeOperatingArea
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