COMPLEMENTARY SILICON POWER
■ SGS-THOMSONPREFERRED SALESTYPES
■ MONOLITHIC DARLINGTON
CONFIGURATION
■ COMPLEMENTARYPNP - NPN DEVICES
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
■ FULLYMOLDED ISOLATEDPACKAGE
■ 2000V DC ISOLATION(U.L. COMPLIANT)
APPLICATIONS
■ LINEARAND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW93CFP, is a silicon epitaxial-base NPN
transistor in monolithic Darlington configuration
and is mounted in TO-220FP fully molded
isolated package. It is intented for use in power
linear and switching applications.
The complementaryPNPtype is the BDW94CFP.
BDW93CFP
BDW94CFP
DARLINGTON TRANSISTORS
3
2
1
T0-220FP
INTERNAL SCHEMATIC DIAGRAM
Typ. = 10 KΩ R2Typ. = 150 Ω
R
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW93CFP
PNP BDW 94C F P
V
V
I
P
T
For PNP types voltage and current values are negative.
April 1998
Collect or- B as e V o lt age (IE= 0 ) 100 V
CBO
Collector-Emitter Voltage ( IB= 0) 100 V
CEO
Collect or Current 12 A
I
C
Collect or Peak Current 15 A
CM
Base Current 0.2 A
I
B
Tot al Dissipat ion at Tc≤ 25 oC33W
tot
Storage Temperature -65 to 150
stg
Max. Operating Juncti on Temperatu re 150
T
j
o
C
o
C
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BDW93CFP / BDW94CFP
THERMAL DATA
R
thj-case
Ther mal Resistance J u nct ion-cas e 3.8
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
E
=0)
Collector Cut-off
Current (I
B
=0)
Emit ter Cut -off Current
=0)
(I
C
∗ Collector-Emitter
V
=100V
CB
=100V T
V
CB
V
=80V 1 mA
CE
V
=5V 2 mA
EB
I
= 10 0 mA 100 V
C
case
=150oC
100
5
Sust aining Voltag e
=0)
(I
B
V
V
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
∗ Collect or-E mitter
CE(sat)
Saturation Voltage
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC Current G ain IC=3A VCE=3V
FE
V
* Pa rallel- d iode Forward
F
Volt age
h
Small Signal Curr ent
fe
Gain
IC=5A IB=20mA
=10A IB=100mA
I
C
IC=5A IB=20mA
I
=10A IB=100mA
C
=5A VCE=3V
I
C
=10A VCE=3V
I
C
IF=5A
I
=10A
F
IC = 1 A VCE=10V
f=1MHz 20
1000
750
100
1.3
1.8
2
3
2.5
4
20000
2
4
µA
mA
V
V
V
V
V
V
Safe Operating Area
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TO-220FP MECHANICAL DATA
BDW93CFP / BDW94CFP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
3/4
BDW93CFP / BDW94CFP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement ofpatents or other rights of third parties which may resultsfrom itsuse. No
license is granted by implication or otherwise underany patent or patentrights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorized foruse as criticalcomponents in lifesupport devices orsystems without express
written approval ofSGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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4/4
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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