SGS Thomson Microelectronics BDW94C, BDW94B, BDW93C Datasheet
BDW93C
COMPLEMENTARY SILICON POWER
■ STMicroelectronics PREFERRED
SALESTYPES
■ COMPLEMENTARY PNP - NPNDEVICES
■ INTEGRATEDANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ LINEARAND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW93C is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220 plastic
package.It is intented for use in power linearand
switchingapplications.
ThecomplementaryPNP typeis BDW94C.
AlsoBDW94B is a PNP type.
BDW94B/BDW94C
DARLINGTONTRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1Typ. = 10 KΩ R2Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW93C
PNP BDW94B BDW94C
V
V
I
P
T
For PNP types voltage and current values are negative.
October 1999
Collec t or -Base Volt age ( IE= 0) 80 100 V
CBO
Collec t or -Emitt er V ol ta ge (IB= 0) 80 100 V
CEO
Collector Current 12 A
I
C
Collector Peak Current 15 A
CM
Base Current 0.2 A
I
B
Tot al Dissipation at T
tot
St orage Tem pe r at ure -65 to 150
stg
Max. Operat ing Junct ion Tem per at ur e 150
T
j
c
≤ 25
o
C
80 W
o
C
o
C
1/6
BDW93C/BDW94B/BDW94C
THERMAL DATA
R
thj-case
Ther mal Res is t anc e J unction-case 1.56
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collect o r Cut- off
Current (I
E
=0)
BDW94B
for
for BDW93C/ 94C V
= 150oC
T
case
for BDW94B V
for BDW93C/ 94C V
I
CEO
I
EBO
V
CEO(sus )
Collect o r Cut- off
Current (I
B
=0)
Emitter Cut-of f Current
=0)
(I
C
∗ Collector-Emitter
Sust aining Voltage
=0)
(I
B
V
CE(sat)
Collector-Emitter
∗
Sat urat ion Voltage
V
∗ Base-Emitter
BE(sat)
Sat urat ion Voltage
h
∗ DC Current Gain IC=3A VCE=3V
FE
V
* Parallel- d iode F orward
F
Voltage
h
SmallSignalCurrent
fe
Gain
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
BDW94B
for
for BDW93C/ 94C V
V
=5V 2 mA
EB
I
= 100 mA
C
for BDW94B
for BDW93C/ 9 4C
I
=5A IB=20mA
C
=10A IB= 100 mA
I
C
IC=5A IB=20mA
=10A IB= 100 mA
I
C
=5A VCE=3V
I
C
=10A VCE=3V
I
C
IF=5A
=10A
I
F
IC=1A VCE=10V
f=1MHz 20
V
V
=80V
CB
= 100 V
CB
=80V
CB
= 100 V
CB
=80V
CE
= 100 V
CE
80
100
1000
750
100
1.3
1.8
100
100
5
5
1
1
2
3
2.5
4
20K
2
4
µA
µA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
2/6
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