BDW93C
COMPLEMENTARY SILICON POWER
■ STMicroelectronics PREFERRED
SALESTYPES
■ COMPLEMENTARY PNP - NPNDEVICES
■ INTEGRATEDANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ LINEARAND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW93C is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220 plastic
package.It is intented for use in power linearand
switchingapplications.
ThecomplementaryPNP typeis BDW94C.
AlsoBDW94B is a PNP type.
BDW94B/BDW94C
DARLINGTONTRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1Typ. = 10 KΩ R2Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW93C
PNP BDW94B BDW94C
V
V
I
P
T
For PNP types voltage and current values are negative.
October 1999
Collec t or -Base Volt age ( IE= 0) 80 100 V
CBO
Collec t or -Emitt er V ol ta ge (IB= 0) 80 100 V
CEO
Collector Current 12 A
I
C
Collector Peak Current 15 A
CM
Base Current 0.2 A
I
B
Tot al Dissipation at T
tot
St orage Tem pe r at ure -65 to 150
stg
Max. Operat ing Junct ion Tem per at ur e 150
T
j
c
≤ 25
o
C
80 W
o
C
o
C
1/6
BDW93C/BDW94B/BDW94C
THERMAL DATA
R
thj-case
Ther mal Res is t anc e J unction-case 1.56
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collect o r Cut- off
Current (I
E
=0)
BDW94B
for
for BDW93C/ 94C V
= 150oC
T
case
for BDW94B V
for BDW93C/ 94C V
I
CEO
I
EBO
V
CEO(sus )
Collect o r Cut- off
Current (I
B
=0)
Emitter Cut-of f Current
=0)
(I
C
∗ Collector-Emitter
Sust aining Voltage
=0)
(I
B
V
CE(sat)
Collector-Emitter
∗
Sat urat ion Voltage
V
∗ Base-Emitter
BE(sat)
Sat urat ion Voltage
h
∗ DC Current Gain IC=3A VCE=3V
FE
V
* Parallel- d iode F orward
F
Voltage
h
SmallSignalCurrent
fe
Gain
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
BDW94B
for
for BDW93C/ 94C V
V
=5V 2 mA
EB
I
= 100 mA
C
for BDW94B
for BDW93C/ 9 4C
I
=5A IB=20mA
C
=10A IB= 100 mA
I
C
IC=5A IB=20mA
=10A IB= 100 mA
I
C
=5A VCE=3V
I
C
=10A VCE=3V
I
C
IF=5A
=10A
I
F
IC=1A VCE=10V
f=1MHz 20
V
V
=80V
CB
= 100 V
CB
=80V
CB
= 100 V
CB
=80V
CE
= 100 V
CE
80
100
1000
750
100
1.3
1.8
100
100
5
5
1
1
2
3
2.5
4
20K
2
4
µA
µA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
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BDW93C/BDW94B/BDW94C
SafeOperating Area
CollectorEmitter SaturationVoltage (NPN types)
DC CurrentGain (NPNtypes)
DC Transconductance(NPN types)
CollectorEmitter SaturationVoltage (NPN types)
CollectorEmitter SaturationVoltage (PNP types)
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BDW93C/BDW94B/BDW94C
SaturatedSwitchingCharacteristics(NPN types)
CollectorEmitter SaturationVoltage (PNP types)
SaturatedSwitchingCharacteristics(PNP types)
DC CurrentGain (PNPtypes)
DC Transconductance(PNP types)
4/6
TO-220 MECHANICAL DATA
BDW93C/BDW94B/BDW94C
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
5/6
BDW93C/BDW94B/BDW94C
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized foruse as critical components in life support devices or systems without express written approval ofSTMicroelectronics.
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