BDW83C
®
COMPLEMENTARY SILICON POWER
■ BDW83C IS A STMicroelectronics
PREFERRED SALESTYPE
■ COMPLEMENTARY PNP - NPN DEVICES
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
■ HIGH DC CURRENT GAIN
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW83C is a Silicon Epitaxial-Base NPN
power monolithic Darlington transistor mounted in
Jedec TO-218 plastic package. It is intended for
use in power linear and switching applications.
The complementary type is BDW84C.
BDW84C
DARLINGTON TRANSISTORS
3
2
1
TO-218
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW83C
PNP BDW84C
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 100 V
CBO
Collector-Emitter Voltage (IB = 0) 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 15 A
I
C
Collector Peak Current 40 A
CM
Base Current 0.5 A
I
B
Total Dissipation at Tc ≤ 25 oC
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
130 W
o
C
o
C
December 2002
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BDW83C / BDW84C
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.96
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 100 V
V
CB
V
= 100 V TC = 150 oC
CB
= 40 V 1 mA
V
CE
= 5 V 2 mA
V
EB
= 30 mA 100 V
I
C
500
5
Sustaining Voltage
(I
= 0)
B
∗ Collector-Emitter
V
CE(sat)
Saturation Voltage
V
∗ Base-Emitter Voltage IC = 6 A VCE = 3 V 2.5 V
BE(on)
hFE∗ DC Current Gain IC = 6 A VCE =3 V
V
Diode Forward Voltage IF = 10 A 4 V
f
RESISTIVE LOAD
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP type voltage and current values are negative.
on
off
Turn-on Time
Turn-off Time
IC = 6 A IB = 12 mA
I
= 15 A IB = 150 mA
C
I
= 15 A VCE =3 V
C
VCC = 30 V IC = 10 A
= 300 Ω RB2 = 150 Ω
R
B1
I
= - IB2 = 40 mA
B1
750
100
2.5
4
20000
0.9
6
µA
mA
V
µs
µs
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TO-218 (SOT-93) MECHANICAL DATA
BDW83C / BDW84C
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R – 12.2 – 0.480
Ø 4 4.1 0.157 0.161
mm inch
H
A
C
L5
E
D
L6
L3
L2
G
¯
F
R
1
2 3
P025A
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BDW83C / BDW84C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectro nics – Printed in Italy – All Rights Reserved
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