
COMPLEMENTARY SILICON POWER DARLINGTON
■ BDW83C IS A SGS-T HO MS ON PRE F ERRE D
SALESTYPE
■ COMPLEMEN TARY PNP - NPN DEVICES
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
■ HIGH DC CURRENT GAIN
BDW83C
BDW84C
TRANSIST ORS
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW83C is a silicon epitaxial-base NPN
power monolithic Darlington transistor mounted in
Jedec TO-218 plastic package. It is intended for
use in power linear and switching applications.
The complementary type is BDW84C.
ABSOL UT E MAXIMU M RATINGS
3
2
1
TO-218
INTERNAL SCHEMATIC DIAGRAM
Symbol Parameter Value Unit
NPN BDW83C
PNP BDW84C
V
V
V
I
P
T
June 1997
Collector-Base Voltage (IE = 0) 100 V
CBO
Collector-Emitter Voltage (IB = 0) 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 15 A
I
C
Collector Peak Current 40 A
CM
Base Current 0.5 A
I
B
Total Dissipation at Tc ≤ 25 oC 130 W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
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BDW83C / BDW84C
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.96
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 100 V
V
CB
V
= 100 V T
CB
= 40 V 1 mA
V
CE
= 5 V 2 mA
V
EB
= 150 oC
case
500
5
IC = 30 mA 100 V
Sustaining Voltage
∗ Collector-Emitter
V
CE(sat)
Saturation Voltage
V
∗ Base-Emitter Voltage IC = 6 A VCE = 3 A 2.5 V
BE(on)
h
∗ DC Current Gain IC = 6 A VCE =3 V
FE
V
* Diode Forward Voltage IF = 10 A 4 V
f
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
on
off
Turn-on Time
Turn-off Time
IC = 6 A IB = 12 mA
I
= 15 A IB = 150 mA
C
I
= 15 A VCE =3 V
C
VCC = 30 V IC = 10 A
R
= 300 Ω RB2 = 150 Ω
B1
I
= - IB2 = 40 mA
B1
750
100
2.5
4
20000
0.9
6
µA
mA
V
µs
µs
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TO-218 (SOT-93) MECHANICAL DATA
BDW83C / BDW84C
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R – 12.2 – 0.480
Ø 4 4.1 0.157 0.161
mm inch
H
A
C
L5
E
D
L6
L3
L2
G
¯
F
R
1
2 3
P025A
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BDW83C / BDW84C
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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