SGS Thomson Microelectronics BDW83C Datasheet
COMPLEMENTARY SILICON POWER DARLINGTON
■ BDW83C IS A SGS-T HO MS ON PRE F ERRE D
SALESTYPE
■ COMPLEMEN TARY PNP - NPN DEVICES
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
■ HIGH DC CURRENT GAIN
BDW83C
BDW84C
TRANSIST ORS
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW83C is a silicon epitaxial-base NPN
power monolithic Darlington transistor mounted in
Jedec TO-218 plastic package. It is intended for
use in power linear and switching applications.
The complementary type is BDW84C.
ABSOL UT E MAXIMU M RATINGS
3
2
1
TO-218
INTERNAL SCHEMATIC DIAGRAM
Symbol Parameter Value Unit
NPN BDW83C
PNP BDW84C
V
V
V
I
P
T
June 1997
Collector-Base Voltage (IE = 0) 100 V
CBO
Collector-Emitter Voltage (IB = 0) 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 15 A
I
C
Collector Peak Current 40 A
CM
Base Current 0.5 A
I
B
Total Dissipation at Tc ≤ 25 oC 130 W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
1/4
BDW83C / BDW84C
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.96
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 100 V
V
CB
V
= 100 V T
CB
= 40 V 1 mA
V
CE
= 5 V 2 mA
V
EB
= 150 oC
case
500
5
IC = 30 mA 100 V
Sustaining Voltage
∗ Collector-Emitter
V
CE(sat)
Saturation Voltage
V
∗ Base-Emitter Voltage IC = 6 A VCE = 3 A 2.5 V
BE(on)
h
∗ DC Current Gain IC = 6 A VCE =3 V
FE
V
* Diode Forward Voltage IF = 10 A 4 V
f
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
on
off
Turn-on Time
Turn-off Time
IC = 6 A IB = 12 mA
I
= 15 A IB = 150 mA
C
I
= 15 A VCE =3 V
C
VCC = 30 V IC = 10 A
R
= 300 Ω RB2 = 150 Ω
B1
I
= - IB2 = 40 mA
B1
750
100
2.5
4
20000
0.9
6
µA
mA
V
µs
µs
2/4
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