Datasheet BDW83C Datasheet (SGS Thomson Microelectronics)

COMPLEMENTARY SILICON POWER DARLINGTON
BDW83C IS A SGS-T HO MS ON PRE F ERRE D
SALESTYPE
COMPLEMEN TARY PNP - NPN DEVICES
HIGH CURRENT CAPABILITY
FAST SWITCHING SPEED
BDW83C BDW84C
TRANSIST ORS
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW83C is a silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. It is intended for use in power linear and switching applications.
The complementary type is BDW84C.
ABSOL UT E MAXIMU M RATINGS
3
2
1
TO-218
INTERNAL SCHEMATIC DIAGRAM
Symbol Parameter Value Unit
NPN BDW83C PNP BDW84C
V V V
I
P
T
June 1997
Collector-Base Voltage (IE = 0) 100 V
CBO
Collector-Emitter Voltage (IB = 0) 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 15 A
I
C
Collector Peak Current 40 A
CM
Base Current 0.5 A
I
B
Total Dissipation at Tc 25 oC 130 W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
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BDW83C / BDW84C
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.96
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off Current (I
= 0)
E
Collector Cut-off Current (I
= 0)
B
Emitter Cut-off Current (I
= 0)
C
Collector-Emitter
= 100 V
V
CB
V
= 100 V T
CB
= 40 V 1 mA
V
CE
= 5 V 2 mA
V
EB
= 150 oC
case
500
5
IC = 30 mA 100 V
Sustaining Voltage
Collector-Emitter
V
CE(sat)
Saturation Voltage
V
Base-Emitter Voltage IC = 6 A VCE = 3 A 2.5 V
BE(on)
h
DC Current Gain IC = 6 A VCE =3 V
FE
V
* Diode Forward Voltage IF = 10 A 4 V
f
t
t
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative.
on off
Turn-on Time Turn-off Time
IC = 6 A IB = 12 mA I
= 15 A IB = 150 mA
C
I
= 15 A VCE =3 V
C
VCC = 30 V IC = 10 A R
= 300 RB2 = 150
B1
I
= - IB2 = 40 mA
B1
750 100
2.5 4
20000
0.9 6
µA
mA
V
µs µs
2/4
TO-218 (SOT-93) MECHANICAL DATA
BDW83C / BDW84C
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598 L2 16.2 – 0.637 L3 18 0.708 L5 3.95 4.15 0.155 0.163 L6 31 1.220
R 12.2 0.480
Ø 4 4.1 0.157 0.161
mm inch
H
A
C
L5
E
D
L6
L3
L2
G
¯
F
R
1
2 3
P025A
3/4
BDW83C / BDW84C
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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. . .
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