BD909/911
BD910/912
COMPLEMENTARY SILICON POWER TRANSISTORS
■ STMicroelectronicsPREFERRED
SALESTYPES
DESCRIPTION
The BD909 and BD911are silicon Epitaxial-Base
NPN power transistors mounted in Jedec TO-220
plastic package. They are intented for use in
powerlinear and switching applications.
The complementary PNP types are BD910 and
BD912respectively.
TO-220
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD909 BD911
PNP BD910 BD912
V
V
V
I
E,IC
P
T
For PNPtypes voltage and current values are negative.
Coll ect o r -B a s e V o lt age (IE= 0) 80 100 V
CBO
Coll ect o r -E mitter Volt a ge (IB= 0) 80 100 V
CEO
Emit ter-B ase Voltage (IC=0) 5 V
EBO
Coll ect o r Curr e nt 15 A
Base Current 5 A
I
B
Total Dissipation at T
tot
St orage T e m pe r ature -65 to 15 0
stg
Max. Operating Junction Temperature 150
T
j
c
≤ 25
o
C
90 W
o
C
o
C
October 1999
1/6
BD909 / BD910 / BD911 / BD912
THERMAL DATA
R
thj-case
Ther mal Resistance Junction-cas e Max 1.4
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
CEO(sus )
V
CE(sat)
V
BE(sat)
Collec to r Cut-of f
Current (I
E
=0)
Collec to r Cut-of f
Current (I
B
=0)
Emitter Cut-off Current
=0)
(I
C
∗ Collector-E mitte r
Sust aining Volta ge
=0)
(I
B
∗ Collector-Emitte r
Sat uration Volt age
∗ Base-Emitter
BD909 / 91 0
for
for BD911 / 912 V
=150oC
T
case
for BD909 / 910 V
for BD911 / 912 V
BD909 / 91 0
for
for BD911 / 912 V
V
=5V 1 mA
EB
I
=100mA forBD909/ 910
C
V
=80V
CB
= 100 V
CB
=80V
CB
= 100 V
CB
=40V
V
CE
=50V
CE
for BD 911/91 2
80
100
IC=5A IB=0.5A
I
=10A IB=2.5A
C
IC=10A IB= 2.5A 2.5 V
500
500
5
5
1
1
1
3
Sat uration Volt age
∗ Base-Emitter Voltage IC=5A VCE=4V 1.5 V
V
BE
h
FE
f
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
DC Current Gain I
∗
Tr ansition fr equ ency IC=0.5A VCE=4V 3 MHz
T
=0.5A VCE=4V
C
=5A VCE=4V
I
C
=10A VCE=4V
I
C
40
15
250
150
5
µA
µA
mA
mA
mA
mA
V
V
V
V
SafeOperating Area DeratingCurves
2/6
BD909 / BD910 / BD911 / BD912
DC CurrentGain (NPN type)
DC Transconductance(NPN type)
DC CurrentGain (PNP type)
DC Transconductance(PNP type)
Collector-EmitterSaturationVoltage (NPN type)
Collector-EmitterSaturationVoltage (PNP type)
3/6
BD909 / BD910 / BD911 / BD912
Base-EmitterSaturationVoltage (NPN type)
TransitionFrequency(NPN type)
Base-EmitterSaturation Voltage(PNP type)
TransitionFrequency(PNP type)
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BD909 / BD910 / BD911 / BD912
TO-220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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BD909 / BD910 / BD911 / BD912
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. Thispublication supersedes and replaces all information previously supplied. STMicroelectronics products
are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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