SGS Thomson Microelectronics BD708, BD707, BD712, BD711, BD709 Datasheet

BD707/709/711



BD708/712

COMPLEMENTARY SILICON POWER TRANSISTORS

■ COMPLEMENTARYPNP- NPNDEVICES

APPLICATION

■ LINEARAND SWITCHING INDUSTRIAL

EQUIPMENT

DESCRIPTION

The BD707, BD709 and BD711 are silicon
Epitaxial-Base NPN power transistors in Jedec
TO-220 plastic package. They are intented for
usein powerlinearand switching applications.

The BD707 and BD711 complementary PNP
types are BD708 and BD712 respectively.

TO-220

3

2

1

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

NPN BD707 BD70 9 BD711
PNP BD708 BD71 2

V
V
V
V

I

P
T

For PNP types voltage and current values are negative

Coll ect o r -B a s e V o lt age (IE=0) 60 80 100 V

CBO

Coll ect o r -E mitter Volt a ge (VBE=0) 60 80 100 V

CER

Coll ect o r -E mitter Volt a ge (IB=0) 60 80 100 V

CEO

Emit ter-B ase Voltage (IC=0) 5 V

EBO

I

Coll ect o r Curr e nt 12 A

C

Coll ect o r Peak Cu rr ent 18 A

CM

I

Base Current 5 A

B

Total Dissipation a t Tc≤ 25oC

tot

St orage Te mperat ur e -65 t o 15 0

stg

T

Max. Operating Junction Temperature 150

j

75 W

o

C

o

C

September 1999

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BD707/708/709/711/712

THERMAL DATA

R

thj-case

R

thj-case

Ther mal Resistan c e Juncti on-cas e Max
Ther mal Resistan c e Juncti on-ambient Max

1.67
70

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CBO

I

CEO

I

EBO

V

CEO(sus )

V

CE(sat)

Collec to r Cut-of f
Current (I

E

=0)

Collec to r Cut-of f
Current (I

B

=0)

Emitter Cut-off Current

=0)

(I

C

∗ Collector-E mitte r

Sust aining Volta ge

=0)

(I

B

∗ Collector-Emitte r

for BD707/ 708 V
for BD709 V
for BD711/ 712 V

=150oC

T

case

for BD707/ 708 V
for BD709 V
for BD711/ 712 V

for BD707/ 708 V

BD709

for
for BD711/ 712 V

V

=5V 1 mA

EB

I

=100mA

C

for BD707/ 708
for BD709
for BD711/712

CB

CB

CB

CB

CB

CB
CE

V

CE

CE

=60V

=80V

= 100 V
=60V

=80V

= 100 V
=30V

=40V

=50V

60
80

100

IC=4A IB=0.4A 1 V

100
100
100

1
1
1

100
100
100

Sat uration V oltage

V

CEK

V

BE

h

FE

f

∗

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
** Valuefor which I
For PNP types voltage and current values are negative.

Knee Voltage I

∗

=3A IB=** 0.4 V

C

∗ Base-Emitter Voltage IC=4A VCE=4V 1.5 V

DC Curre nt Gain I

∗

Tr ansition fr equ ency IC=300mA VCE=3V 3 MHz

T

=3.3 A at VCE= 2V.

C

=0.5A VCE=2V

C

=2A VCE=2V

I

C

for BD707/70 8

for

=4A VCE=4V

I

C

=10A VCE=4V

I

C

for BD707/70 8

BD709

for

for BD711/ 712

BD709

40

30
30
15

120

400

150

5

10

8
8

µA
µ
µA

mA
mA
mA

mA
mA
mA

V
V
V

A

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