POWER DARLINGTON TRANSISTORS
■ SGS-THOMSONPREFERRED SALESTYPES
■ COMPLEMENTARYPNP - NPN DEVICES
■ MONOLITHICDARLINGTON
CONFIGURATION
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTERDIODE
APPLICATION
■ LINEARAND SWITCHING INDUSTRIAL
EQUIPMENT
BD677/A/679/A/681
BD678/A/680/A/682
COMPLEMENTARY SILICON
1
2
3
DESCRIPTION
SOT-32
The BD677, BD677A, BD679, BD679A and
BD681 are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mounted in Jedec SOT-32 plastic package.
They are intended for use in medium power linar
and switching applications
INTERNAL SCHEMATIC DIAGRAM
The complementary PNP types are BD678,
BD678A, BD680, BD680A and BD682
respectively.
R1Typ.= 7 K Ω R2Typ.= 230 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD677/A BD679/A BD681
PNP BD678/ A BD680/A BD682
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collect or- B as e V o lt age (IE=0) 60 80 100 V
CBO
Collector-Emitter Voltage (IB=0) 60 80 100 V
CEO
Emitter-Base Voltage ( IC=0) 5 V
EBO
Collect or Cur rent 4 A
I
C
Collect or P ea k Current 6 A
CM
Base Current 0.1 A
I
B
Tot al Dissipation at Tc≤ 25oC40W
tot
Storage Temperature -65 to 1 50
stg
Max. Operating Junc t i on Temperat ure 150
T
j
o
C
o
C
September 1997
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BD677/677A/678/678A/679/679A/680/680A/681/682
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Junct io n-c ase Max
Ther mal Resistance Junct io n-am bien t Max
3.12
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
CEO(sus )
V
CE(sat)
Collector Cut -off
Current (I
E
=0)
Collector Cut -off
Current (I
B
=0)
Emit ter Cut - o f f Curr ent
=0)
(I
C
Collector-E m it t er
Sust aining Voltage
∗
Collector-E m it t er
Saturation Voltage
∗
=ratedV
V
CE
VCE=ratedV
V
= half rated V
CE
V
=5V
EB
I
=50mA
C
CBO
CBO
TC= 100oC
CEO
for B D677 / 677A/678/678A
for B D679 / 679A/680/680A
for B D681 / 682
for B D677 / 678/679/ 6 80/ 681 / 682
I
=1.5A IB=30mA
C
for B D677 A/678A/ 6 79A/ 6 80A
=2A IB=40mA
I
C
0.2
2
0.5 mA
2mA
60
80
100
2.5
2.8
Base-Emitt er V oltage fo r BD677/ 678/679/ 6 80/ 681 / 682
=1.5A VCE=3V
I
V
∗
BE
C
for B D677 A/678A/ 6 79A/ 6 80A
=2A VCE=3V
I
C
2.5
2.5
DC C urr ent Gain for BD677 / 678/679/680/681 / 682
h
∗
FE
h
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Small Signal Curr ent
fe
Gain
I
=1.5A VCE=3V
C
for B D677 A/678A/ 6 79A/ 6 80A
=2A VCE=3V
I
C
IC=1.5A VCE=3V f=1MHz
750
750
1
mA
mA
V
V
V
V
V
V
V
Safe Operating Areas DeratingCurve
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BD677/677A/678/678A/679/679A/680/680A/681/682
DCCurrent Gain (NPNtype)
Collector-Emitter Saturation Voltage(NPN type)
DC Current Gain (PNP type)
Collector-EmitterSaturation Voltage (PNP type)
Base-EmitterSaturation Voltage (NPN type)
Base-EmitterSaturationVoltage (PNP type)
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BD677/677A/678/678A/679/679A/680/680A/681/682
Base-EmitterOn Voltage(NPN type) Base-EmitterOn Voltage (PNP type)
Freewheel Diode ForwardVoltage (NPN types) FreewheelDiode Forward Voltage (PNP types)
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BD677/677A/678/678A/679/679A/680/680A/681/682
SOT-32(TO-126)MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
mm inch
H2
0016114
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BD677/677A/678/678A/679/679A/680/680A/681/682
Informationfurnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such information nor for any infringementof patents or other rightsof third parties which may results fromits use.No
license is granted byimplicationor otherwise under anypatentor patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in thispublication are subject to change without notice. This publicationsupersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedfor useascritical componentsin lifesupport devicesor systemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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