BD533/5/7
BD534/6/8
COMPLEMENTARY SILICON POWER TRANSISTORS
■ BD534,BD535, BD536, BD537 AND BD538
ARESGS-THOMSONPREFERRED
SALESTYPES
DESCRIPTION
The BD533, BD535, and BD537 are silicon
epitaxial-base NPN power transistors in Jedec
TO-220 plastic package, intented for use in
medium power linear and switching applications.
The complementary PNP types are BD534,
BD536,and BD538 respectively.
TO-220
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD533 BD535 BD537
PNP BD534 BD536 BD538
V
V
V
V
I
C,IE
P
T
For PNP types voltage and current values are negative.
Collect or- B as e Voltage (IE=0) 456080V
CBO
Collector-Emitter Voltage (VBE=0) 456080V
CES
Collector-Emitter Voltage (IB=0) 456080V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collect or and Emitter Current 8 A
Base Current 1 A
I
B
Tot al Di ss ipa t ion at Tc≤ 25 oC50W
tot
Storage Tem perature -65 to 150
stg
Max. Operating J unct i on Temperatu re 150
T
j
o
C
o
C
June 1997
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BD533/BD534/BD535/BD536/BD537/BD538
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Ju nct ion-cas e Max
Ther mal Resistance Ju nct ion-ambient Max
2.5
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Paramet er Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut- of f
Current (I
E
=0)
for BD533/534 V
for BD535/536 V
for BD537/538 V
I
CES
Collector Cut- of f
Current (V
BE
=0)
for BD533/534 V
for BD535/536 V
for BD537/538 V
I
EBO
V
CEO(sus)
Emit ter Cut-o f f Current
=0)
(I
C
∗ Collector-Emitter
V
=5V 1 mA
EB
I
=100mA forBD533/534
C
Sust aining Voltage
=0)
(I
B
V
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
For PNP typesvoltage and current valuesare negative.
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er Voltage IC=2A VCE=2V 1.5 V
BE
h
∗ DC C urr ent Gain IC=10mA VCE=5V
FE
f
Tr ansition frequency IC=500mA VCE=1V 3 12 MHz
T
IC=2A IB=0.2A
=6A IB= 0.6 A 0.8
I
C
=500mA VCE=2V
I
C
=2A VCE=2V
I
C
=45V
CB
=60V
CB
=80V
CB
=45V
CE
=60V
CE
CE = 80 V
for BD535/536
for BD537/538
for BD533/534
for BD535/536
for BD537/538
for BD533/534
for BD535/536
for BD537/538
45
60
80
20
20
15
40
25
25
15
100
100
100
100
100
100
0.8 V
µA
µA
µA
µA
µA
µA
V
V
V
V
Safe Operating Areas
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BD533/BD534/BD535/BD536/BD537/BD538
TO-220MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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BD533/BD534/BD535/BD536/BD537/BD538
Informationfurnished is believed to beaccurate and reliable.However, SGS-THOMSONMicroelectronics assumesno responsability for the
consequencesof use of such information nor for any infringementof patentsor other rights of third parties which may results fromits use.No
license is granted by implicationor otherwiseunder anypatentor patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication are subjectto change without notice. This publicationsupersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedfor useascritical components inlifesupportdevicesor systemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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