■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ PNP TRANSIS T OR
DESCRIPTION
The BD234 is a silicon epitaxial-base PNP power
transistor in Jedec SOT-32 plastic package
inteded for use in medium power linear and
switching applications.
BD234
SILICON PNP TRANSISTOR
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) -45 V
CBO
Collector-Emitter Voltage (RBE = 1KΩ)-45V
CER
Collector-Emitter Voltage (IB = 0) -45 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
Collector Current -2 A
I
C
Collector Peak Current -6 A
CM
Total Dissipation at Tc ≤ 25 oC25W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
May 1997
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BD234
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 5
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= -45 V
V
CB
V
= -45 V Tc = 150 oC
CB
= -5 V -1 mA
V
EB
-0.1-2mA
IC = -100 mA -45 V
Sustaining Voltage
V
∗ Collector-Emitter
CE(sat)
IC = -1 A IB = -0.1 A -0.6 V
Saturation Voltage
∗ Base-Emitter Voltage IC = -1 A VCE = -2 V -1.3 V
V
BE
h
∗ DC Current Gain IC = -150 mA VCE = -2 V
FE
f
h
FE1/hFE2
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Transition frequency IC = -250 mA VCE = -10 V 3 MHz
T
∗ Matched Pairs IC = -150 mA VCE = -2 V 1.6
I
= -1 A VCE = -2 V
C
40
25
mA
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0016114
SOT-32 (TO-126) MECHANICAL DATA
BD234
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e2.2 0.087
e3 4.15 4.65 0.163 0.183
F3.8 0.150
G 3 3.2 0.118 0.126
H2.540.100
H2 2.15 0.084
mm inch
H2
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BD234
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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