SGS Thomson Microelectronics BD234 Datasheet
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ PNP TRANSIS T OR
DESCRIPTION
The BD234 is a silicon epitaxial-base PNP power
transistor in Jedec SOT-32 plastic package
inteded for use in medium power linear and
switching applications.
BD234
SILICON PNP TRANSISTOR
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) -45 V
CBO
Collector-Emitter Voltage (RBE = 1KΩ)-45V
CER
Collector-Emitter Voltage (IB = 0) -45 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
Collector Current -2 A
I
C
Collector Peak Current -6 A
CM
Total Dissipation at Tc ≤ 25 oC25W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
May 1997
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BD234
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 5
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= -45 V
V
CB
V
= -45 V Tc = 150 oC
CB
= -5 V -1 mA
V
EB
-0.1-2mA
IC = -100 mA -45 V
Sustaining Voltage
V
∗ Collector-Emitter
CE(sat)
IC = -1 A IB = -0.1 A -0.6 V
Saturation Voltage
∗ Base-Emitter Voltage IC = -1 A VCE = -2 V -1.3 V
V
BE
h
∗ DC Current Gain IC = -150 mA VCE = -2 V
FE
f
h
FE1/hFE2
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Transition frequency IC = -250 mA VCE = -10 V 3 MHz
T
∗ Matched Pairs IC = -150 mA VCE = -2 V 1.6
I
= -1 A VCE = -2 V
C
40
25
mA
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