SMALL SIGNAL NPN TRANSISTORS
Type Marking
BC847B 1F
■ SILICONEPITAXIALPLANARNPN
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACEMOUNTING
CIRCUITS
■ LOW LEVEL GENERALPURPOSE
■ PNP COMPLEMENTIS BC857
BC847
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
V
I
I
I
P
T
Collector-Emitter Voltage (VBE=0) 50 V
CES
Collect or- B as e Vo lt age (IE=0) 50 V
CBO
Collector-Emitter Voltage (IB=0) 45 V
CEO
Emitter-Base Voltage (IC=0) 6 V
EBO
Collect or Current 0.1 A
I
C
Collect or Pea k Curr ent 0.2 A
CM
Base Peak Current 0.2 A
BM
Emitter Peak Current 0.2 A
EM
Tot al Dissipation at Tc=25oC 300 mW
tot
Storage Temperature -65 to 150
stg
Max. Operating J unc tion Tem per ature 150
T
j
o
C
o
C
October 1997
1/4
BC847
THERMAL DATA
R
thj-amb
R
thj-SR
• Mounted on a ceramic substrate area = 10 x8 x 0.6 mm
Thermal Resistance Junction-Ambient Max
•
•
Ther mal Resistance Junc t io n-S ubstrat e Max
420
330
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
V
(BR)CES
CBO
Collector Cut -off
Current (I
E
=0)
∗ Collector-Em it t er
=30V
V
CE
V
=30V T
CE
I
=10µA50V
C
amb
=150oC
15
5
Break dow n Voltage
=0)
(V
BE
V
∗ Co llec tor-Bas e
(BR) CBO
I
=10µA50V
C
Break dow n Voltage
=0)
(I
E
V
∗ Co llec tor-Em it t er
(BR) CEO
I
=2mA 45 V
C
Break dow n Voltage
=0)
(I
B
V
(BR)EBO
Emitt er-Base
I
=10µA6V
C
Break dow n Voltage
=0)
(I
C
V
V
∗ Collector-Em it t er
CE(sat)
Saturation Voltage
∗ Base-Emitt er
BE(sat)
Saturation Voltage
V
∗ Base-Emitt er On
BE(on)
Volt age
h
∗ DC Cur rent G ain IC=10µAVCE=5V
FE
f
C
Tr ansition Frequency IC=10mA VCE= 5 V f = 100MHz 300 MHz
T
Collector B ase
CB
IC=10mA IB=0.5mA
=100mA IB=5mA
I
C
IC=10mA IB=0.5mA
=100mA IB=5mA
I
C
IC=2mA VCE=5V
=10mA VCE=5V
I
C
=2mA VCE= 5 V 200
I
C
IE=0 VCB=10V f=1MHz 4.5 pF
0.58 0.63
0.09
0.2
0.25
0.6
0.75
0.9
0.7
0.7
0.77
150
290 450
Capacit a nc e
C
Collector Emitter
EB
IC=0 VEB=0.5V f=1MHz 9 pF
Capacit a nc e
NF Noise Figure V
∗ Input I m p edanc e VCE=5V IC= 2 mA f = 1KHz 3.2 4.5 8.5 KΩ
h
ie
h
∗ Reverse Vo ltage Ratio VCE=5V IC=2mA f=1KHz 2 10
re
hfe∗ Sm all S ignal Current
=5V IC=0.2mA f=1KHz
CE
∆f = 200 Hz R
=2KΩ
G
VCE=5V IC= 2 mA f = 1KHz 330
210dB
Gain
∗ Out put A d m it t a nc e VCE=5V IC= 2 mA f = 1KHz 30 60 µs
h
oe
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
nA
µA
V
V
V
V
V
V
-4
2/4
SOT-23 MECHANICAL DATA
BC847
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.85 1.1 33.4 43.3
B 0.65 0.95 25.6 37.4
C 1.20 1.4 47.2 55.1
D 2.80 3 110.2 118
E 0.95 1.05 37.4 41.3
F 1.9 2.05 74.8 80.7
G 2.1 2.5 82.6 98.4
H 0.38 0.48 14.9 18.8
L 0.3 0.6 11.8 23.6
M 0 0.1 0 3.9
N 0.3 0.65 11.8 25.6
O 0.09 0.17 3.5 6.7
mm mils
0044616/B
3/4
BC847
Information furnishedis believed tobe accurateand reliable. However, SGS-THOMSON Microelectronicsassumes no responsability forthe
consequencesof use ofsuch information nor for anyinfringement of patents or other rights of third parties whichmay resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patent or patentrights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice.This publication supersedes and replaces all information previouslysupplied.
SGS-THOMSONMicroelectronics productsare notauthorized for useas criticalcomponents inlifesupportdevicesor systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSONMicroelectronics- Printedin Italy- AllRights Reserved
Australia- Brazil - Canada- China- France- Germany- Hong Kong - Italy- Japan- Korea- Malaysia - Malta- Morocco- The Netherlands -
Singapore- Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom- U.S.A
SGS-THOMSONMicroelectronicsGROUP OF COMPANIES
.
4/4
Loading...