SGS Thomson Microelectronics BC847 Datasheet

SMALL SIGNAL NPN TRANSISTORS

Type Marking

BC847B 1F

■ SILICONEPITAXIALPLANARNPN

TRANSISTORS

■ MINIATUREPLASTIC PACKAGEFOR

APPLICATIONIN SURFACEMOUNTING
CIRCUITS

■ LOW LEVEL GENERALPURPOSE

■ PNP COMPLEMENTIS BC857

BC847

2

3

1

SOT-23

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val u e Uni t

V
V
V
V

I
I
I
P

T

Collector-Emitter Voltage (VBE=0) 50 V

CES

Collect or- B as e Vo lt age (IE=0) 50 V

CBO

Collector-Emitter Voltage (IB=0) 45 V

CEO

Emitter-Base Voltage (IC=0) 6 V

EBO

Collect or Current 0.1 A

I

C

Collect or Pea k Curr ent 0.2 A

CM

Base Peak Current 0.2 A

BM

Emitter Peak Current 0.2 A

EM

Tot al Dissipation at Tc=25oC 300 mW

tot

Storage Temperature -65 to 150

stg

Max. Operating J unc tion Tem per ature 150

T

j

o

C

o

C

October 1997

1/4

BC847

THERMAL DATA

R

thj-amb

R

thj-SR

• Mounted on a ceramic substrate area = 10 x8 x 0.6 mm

Thermal Resistance Junction-Ambient Max

•

•

Ther mal Resistance Junc t io n-S ubstrat e Max

420
330

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwisespecified)

case

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

I

V

(BR)CES

CBO

Collector Cut -off
Current (I

E

=0)

∗ Collector-Em it t er

=30V

V

CE

V

=30V T

CE

I

=10µA50V

C

amb

=150oC

15

5

Break dow n Voltage

=0)

(V

BE

V

∗ Co llec tor-Bas e

(BR) CBO

I

=10µA50V

C

Break dow n Voltage

=0)

(I

E

V

∗ Co llec tor-Em it t er

(BR) CEO

I

=2mA 45 V

C

Break dow n Voltage

=0)

(I

B

V

(BR)EBO

Emitt er-Base

I

=10µA6V

C

Break dow n Voltage

=0)

(I

C

V

V

∗ Collector-Em it t er

CE(sat)

Saturation Voltage

∗ Base-Emitt er

BE(sat)

Saturation Voltage

V

∗ Base-Emitt er On

BE(on)

Volt age

h

∗ DC Cur rent G ain IC=10µAVCE=5V

FE

f

C

Tr ansition Frequency IC=10mA VCE= 5 V f = 100MHz 300 MHz

T

Collector B ase

CB

IC=10mA IB=0.5mA

=100mA IB=5mA

I

C

IC=10mA IB=0.5mA

=100mA IB=5mA

I

C

IC=2mA VCE=5V

=10mA VCE=5V

I

C

=2mA VCE= 5 V 200

I

C

IE=0 VCB=10V f=1MHz 4.5 pF

0.58 0.63

0.09

0.2

0.25

0.6

0.75

0.9

0.7

0.7

0.77

150
290 450

Capacit a nc e

C

Collector Emitter

EB

IC=0 VEB=0.5V f=1MHz 9 pF

Capacit a nc e

NF Noise Figure V

∗ Input I m p edanc e VCE=5V IC= 2 mA f = 1KHz 3.2 4.5 8.5 KΩ

h

ie

h

∗ Reverse Vo ltage Ratio VCE=5V IC=2mA f=1KHz 2 10

re

hfe∗ Sm all S ignal Current

=5V IC=0.2mA f=1KHz

CE

∆f = 200 Hz R

=2KΩ

G

VCE=5V IC= 2 mA f = 1KHz 330

210dB

Gain

∗ Out put A d m it t a nc e VCE=5V IC= 2 mA f = 1KHz 30 60 µs

h

oe

∗

Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%

nA
µA

V
V

V
V

V
V

-4

2/4