SGS Thomson Microelectronics BC547C-AP, BC547B-AP Datasheet
BC547B
BC547C
SMALL SIGNAL NPN TRANSIS TORS
■ SILICON EPI TAX IA L PLANAR N PN
TRANSISTORS
■ TO-92 PACKAGE SUITABLE FOR
THROU GH-HOLE PCB ASSEMBLY
■ BC547B - THE PNP COMPLEMENTARY
TYPE IS BC557B
■
APPLICATIONS
■ WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPMENT
■ SMALL LOAD SWITCH TRANSISTOR S
WITH HIGH GAIN AND LO W SA TUR ATION
VOLTAG E
®
INTER NAL SCH E M ATI C DIAG RA M
March 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (IE = 0) 50 V
V
CEO
Collector-Emitter Voltage (IB = 0) 45 V
V
EBO
Emitter-Base Voltage (IC = 0) 6 V
I
C
Collector Current 100 mA
I
CM
Collector Peak Current (tp < 5 ms) 200 mA
P
tot
Total Dissipation at TC = 25 oC 500 mW
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
TO-92
Bulk
TO-92
Ammopack
Ordering Code Marking Package / Shipment
BC547B BC547B TO-92 / Bulk
BC547B-AP BC547B TO-92 / Ammopack
BC547C BC547C TO-92 / Bulk
BC547C-AP BC547C TO-92 / Ammopack
1/5
THERMAL DATA
R
thj-amb
•
R
thj-Case
•
Thermal Resistance Junction-Ambient Max
Thermal Resistance Junction-Case Max
250
83.3
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 30 V
V
CB
= 30 V TC = 150 oC
15
5
nA
µA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V 100 nA
V
(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= 10 mA 45 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 10 mA IB = 0.5 mA
I
C
= 100 mA IB = 5 mA
0.09
0.2
0.25
0.6
V
V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 10 mA IB = 0.5 mA
I
C
= 100 mA IB = 5 mA
0.7
0.9
V
V
V
BE(on)
∗ Base-Emitter On
Voltage
IC = 2 mA VCE = 5 V
I
C
= 10 mA VCE = 5 V
0.58 0.66 0.7
0.77
V
V
h
FE
DC Current Gain IC = 2 mA VCE = 5 V
for BC547B
for BC547C
200
420
450
800
f
T
Transition Frequency IC = 10 mA VCE = 5 V f = 100MHz 100 MHz
C
CBO
Collector-Base
Capacitance
IE = 0 VCB = 10 V f = 1 MHz 1.5 pF
C
EBO
Emitter-Base
Capacitance
IC = 0 VEB = 0.5 V f = 1 MHz 11 pF
NF Noise Figure
V
CE
= 5 V IC = 200 µA f = 1KHz
∆f = 200 Hz R
G
= 2 KΩ
210dB
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
BC547B / BC547C
2/5
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