SGS Thomson Microelectronics BC107 Datasheet
BC107
BC108
LOW NOISE GENERAL PURPOSE AUDIOAMPLIFIERS
DESCRIPTION
The BC107 and BC108 are silicon planar
epitaxial NPN transistors in TO-18 metal case.
They are suitable for use in driver stages, low
noise inputstages and signal processing circuits
of television reveivers. The PNP complemet for
BC107 is BC177.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
BC107 BC108
V
V
V
P
T
Collector-Base Voltage (IE=0) 50 30 V
CBO
Collector-Emitter Voltage (IB=0) 45 20 V
CEO
Emitter-Base Voltage (IC=0) 6 5 V
EBO
Collect or Current 100 mA
I
C
Total Dissipat ion at T
tot
Stora ge T emperatu re -55 to 175
stg
Max. Oper at i ng Juncti on Temperatu r e 175
T
j
at T
amb
case
≤ 25oC
≤ 25oC
0.3
0.75
o
o
W
W
C
C
November 1997
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BC107/BC108
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist ance Junctio n- Case Max
Thermal Resistance Junction-Ambient Max
200
500
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CBO
Collector Cut -off
Current (I
E
=0)
for B C107
VCB=40V
=40V T
V
CB
cas e
=150oC
15
15
for B C108
=20V
V
CB
=20V T
V
CB
V
(BR)CBO
V
(BR) CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Collector-Base
Break dow n Voltage
(IE = 0)
∗ Collect or- E mitter
Break dow n Voltage
=0)
(I
B
Emitt er-Base
Break dow n Voltage
=0)
(I
C
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitt er
Saturation Voltage
∗ Base-Emitt er O n
Volt age
IC=10µA
for B C107
for B C108
I
=10mA
C
for B C107
for B C108
I
=10µA
E
for B C107
for B C108
IC=10mA IB=0.5mA
=100mA IB=5mA
I
C
IC=10mA IB=0.5mA
I
=100mA IB=5mA
C
IC=2mA VCE=5V
=10mA VCE=5V
I
C
∗ DC C urrent Gain IC=2mA VCE=5V
for B C107
for B C107 Gr. A
for B C107 Gr. B
for B C108
for B C108 Gr. A
for B C108 Gr. B
for B C108 Gr. C
=10µAVCE=5V
I
C
for B C107
for B C107 Gr. A
for B C107 Gr. B
for B C108
for B C108 Gr. A
for B C108 Gr. B
for B C108 Gr. C
∗ Small Signal Cur r ent
h
fe
Gain
IC=2mA VCE=5V f=1KHz
for B C107
for B C107 Gr. A
for B C107 Gr. B
for B C108
for B C108 Gr. A
for B C108 Gr. B
for B C108 Gr. C
=10mA VCE= 10 V f = 100 MH z
I
C
∗
Pulsed: Pulse duration = 300µs, duty cycle ≤ 1%
cas e
=150oC
50
30
45
20
6
5
70
200
750
950
550 650
700
110
110
200
110
110
200
420
120
90
40
150
120
90
40
100
150
270
250
190
300
370
190
300
500
2
15
15
250
600
700
770
450
220
450
800
220
450
800
nA
µA
µA
µA
V
V
V
V
V
V
mV
mV
mV
mV
mV
mV
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