SGS Thomson Microelectronics BAT60J Datasheet
1/5
BAT60J
May 2000 - Ed: 4A
SMALL SIGNAL SCHOTTKY DIODE
n VERY SMALL CONDUCTION LOSSES
n NEGLIGIBLE SWITCHING LOSSES
n LOW FORWARDVOLTAGE DROP
n EXTREMELY FAST SWITCHING
n SURFACE MOUNTED DEVICE
FEATURES AND BENEFITS
Schottky barrierdiode encapsulated in aSOD-323
small SMD package.
This device is intended for use in portable
equipments. It is suited for DC to DC converters,
step-up conversionand power management.
DESCRIPTION
SOD-323
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 10 V
I
F
Peak forward current δ = 0.11 3 A
I
FSM
Surge non repetitive forward current tp=10ms 5 A
P
tot
Power Dissipation Ta=25°C 310 mW
T
stg
Storage temperature range - 65 to +150 °C
Tj Maximum operatingjunction temperature * 150 °C
TL Maximum temperaturefor soldering during 10s 260 °C
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
R
th (j-a)
Junction to ambient (*) 400 °C/W
(*) Mounted onepoxy board with recommended padlayout.
THERMAL RESISTANCE
*:
dPtot
dTj Rth j a
<
−1()
thermal runaway condition for a diode on its own heatsink
A
K
60
BAT60J
2/5
Symbol Tests Conditions Tests conditions Min. Typ. Max. Unit
VF* Forward voltage drop Tj = 25°CI
F
= 10 mA 0.28 0.32 V
IF= 100 mA 0.35 0.40
IF= 1 A 0.53 0.58
IR** Reverseleakage current Tj = 25°CV
R
=5V 1 3 µA
Tj = 25°CV
R
= 8 V 1.3 4
Tj = 80°CV
R
= 8 V 73 150
STATIC ELECTRICAL CHARACTERISTICS
Pulse test: * tp = 380µs, δ <2%
** tp = 5ms, δ <2%
To evaluate the conduction losses the following equation:
P = 0.38 x I
F(AV)
+ 0.17 I
F2(RMS)
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