SGS Thomson Microelectronics BAT54W, BAT54SW, BAT54J, BAT54AW, BAT54CW Datasheet
BAT54J / W / AW / CW / SW
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
VERYSMALLCONDUCTION LOSSES
NEGLIGIBLESWITCHINGLOSSES
LOW FORWARD VOLTAGEDROP
SURFACEMOUNTDEVICE
DESCRIPTION
Schottky barrier diodes encapsulated either in
SOT-323 or SOD-323smallSMD packages.
Single and doublediodeswith differentpining are
available.
K
BAT54W
K
BAT54CW
NC
A
A2
A1
BAT54J
NC
K
A
A2
K
A1
SOT-323
K2
A
K2
K1
A
K1
BAT54AW
A2
K1
A1
K2
A2
K2
K1
A1
BAT54SW
86
AK
SOD-323
ABSOLUTE RATINGS
(limitingvalues)
Symbol Parameter Value Unit
V
I
RRM
FSM
P
T
Repetitivepeak reversevoltage 30 V
I
Continuousforward current 0.3 A
F
Surgenon repetitive forwardcurrent tp=10mssinusoidal 1 A
Powerdissipation(note1)
tot
Tamb= 25°C
Maximumstorage temperaturerange - 65 to +150 °C
stg
SOD-323 230 mW
SOT-323
Tj Maximumoperating junctiontemperature* 150 °C
T
Note 1:for double diodes, Ptot isthe totaldissipationof bothdiodes
dPtot
*:
June 1999 - Ed: 2A
Maximumtemperaturefor solderingduring 10s 260 °C
L
1
dTj
<
Rth(j−a
thermal runawayconditionfor a diode on its own heatsink
)
1/5
BAT54J/ W / AW / CW / SW
THERMALRESISTANCE
Symbol Parameters Value Unit
R
th (j-a)
Junctionto ambient(*) SOD-323 550 °C/W
SOT-323
°
(*)Mountedon epoxy board,withrecommendedpadlayout.
STATICELECTRICAL CHARACTERISTICS
(per diode)
Symbol Parameters Testsconditions Min. Typ. Max. Unit
V
* Forwardvoltagedrop Tj = 25°CI
F
** Reverseleakage current Tj = 25°CV
I
R
= 0.1 mA 240 mV
F
= 1 mA 320
I
F
= 10 mA 400
I
F
I
= 30 mA 500
F
= 100 mA 900
I
F
=30V 1
R
Tj = 100°C 100
Pulse test : * tp =380 µs, δ <2%
** tp =5 ms, δ <2%
DYNAMICCHARACTERISTICS(Tj = 25°C)
C/W
µ
A
Symbol Parameters Tests conditions Min. Typ. Max. Unit
C Junction
Tj=25°CV
R
= 1 V F =1 MHz 10 pF
capacitance
t
rr
Reverserecovery
time
Fig. 1-1: Forward voltage drop versus forward
current(typicalvalues,low level).
IFM(A)
2.00E-2
1.80E-2
1.60E-2
1.40E-2
1.20E-2
1.00E-2
8.00E-3
6.00E-3
4.00E-3
2.00E-3
0.00E+0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
Tj=100°C
Tj=50°C
IF=10mA IR=10mA Tj=25°C
I
= 1 mA RL=100Ω
rr
Fig. 1-2:
Forward voltage drop versus forward
current(typicalvalues,high level).
IFM(A)
5E-1
1E-1
Tj=25°C
Tj=50°C
1E-2
VFM(V)
1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
5ns
Tj=100°C
Tj=25°C
VFM(V)
2/5
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