SGS Thomson Microelectronics BAT49 Datasheet
®
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against excessive voltage such as electrostatic discharges.
BAT 49
DO 41
(Glass)
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter V alue Unit
V
RRM
I
F
I
FRM
I
FSM
T
stg
T
T
L
Repetitive Peak Rev erse Voltage 80 V
Forward Continuous Current*
Repetitive Peak Forward Current*
Surge non Repetitive Forward Current*
= 70
T
a
t
= 1s
p
0.5
δ ≤
≤ 10ms
t
p
C
°
500 mA
3A
10 A
Storage and Junction Temperature Range - 65 to 150
j
Maximum Lead Temperature for Soldering during 10s at 4mm
- 65 to 125
230
from Case
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
Junction-ambient* 110
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
I
* *
R
V
* *
F
= 25°CV
T
j
= 25°CI
T
j
T
= 25°CI
j
= 25°CI
T
j
= 80V
R
= 10mA
F
= 100mA
F
= 1A
F
200
0.32 V
0.42
1
C/W
°
µ
C
°
C
°
C
°
A
DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C
* On infinite heatsink with 4mm lead length
** Pulse test: t
= 25°C f = 1MHz
T
j
300µs δ < 2%
≤
p
.
August 1999 Ed : 1A
V
= 0V 120 pF
R
V
= 5V 35
R
1/4
BAT 49
Figure 1. Forward current versus forward
voltage at low level (typical values).
Figure 2. Forward current versus forward
voltage at high level (typical values).
Figure 3. Reverse current versus junction
temperature.
Figure 4. Reverse current versus V
cent.
RRM
in per
2/4
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