SGS Thomson Microelectronics BAT48, BAT47 Datasheet
BAT 47
SMALLSIGNALSCHOTTKY DIODE
DESCRIPTION
Generalpurpose,metal to silicon diodes featuring
very low turn-onvoltageand fastswitching.
These devices have integrated protectionagainst
excessivevoltagesuchaselectrostaticdischarges.
ABSOLUTE RATINGS(limitingvalues)
BAT 48
DO 35
(Glass)
Symbol Parameter BAT47 BAT48 Unit
V
RRM
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
L
Repetitive Peak Reverse Voltage 20 40 V
Forward Continuous Current*
Repetitive Peak Fordward Current* t
Surge non Repetitive Forward Current* tp= 10ms 7.5 A
Power Dissipation* Ta=25°C 330 mW
Storage andJunction TemperatureRange - 65 to + 150
Maximum Temperature for Soldering during 10s at 4mmfrom
Case
=25°C
T
a
1s
≤
p
δ ≤ 0.5
tp= 1s 1.5
350 mA
1A
- 65to + 125
230
THERMALRESISTANCE
Symbol Test Conditions Value Unit
R
th(j-l)
* On infinite heatsink with 4mm lead length
Junction-ambient* 300 °
C
°
°C
°C
C/W
August 1999 Ed: 1A
1/5
BAT47/BAT48
ELECTRICALCHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)
V
*
F
IR=10µA
I
R
T
Tj=25°CIF= 1mA
T
T
T
T
T
Tj=25°CIF= 200mA 0.75
T
*T
I
R
T
T
T
T
T
T
T
T
T
Tj=25°C
T
=25µA
=25°CIF= 0.1mA
j
=25°CIF= 10mA
j
=25°CIF= 30mA
j
=25°CIF= 150mA
j
=25°CIF= 300mA
j
=25°CIF= 50mA
j
=25°CIF= 500mA 0.9
j
=25°CV
j
=60°C 10
j
=25°C
j
=60°C
j
=25°C
j
=60°C
j
=25°C
j
=60°C
j
=25°C
j
=60°C
j
=60°C
j
= 1.5V All Types 1
R
V
= 10V BAT47 4
R
V
= 20V 10
R
V
= 10V BAT48 2
R
V
= 20V 5
R
V
= 40V 25
R
BAT47 20 V
BAT48 40
All Types 0.25 V
0.3
0.4
BAT47 0.5
0.8
1
BAT48 0.5
20
30
15
25
50
A
µ
DYNAMICCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C
t
rr
* Pulsetest: tp≤ 300µs δ< 2%.
Tj=25°CVR=0V
=25°CVR=1V
T
j
Tj=25°CIF= 10mA VR=1V irr= 1mA RL= 100Ω
2/5
f = 1MHz 20 pF
12
10 ns
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