Datasheet BAT48, BAT47 Datasheet (SGS Thomson Microelectronics)

BAT 47



SMALLSIGNALSCHOTTKY DIODE

DESCRIPTION

Generalpurpose,metal to silicon diodes featuring
very low turn-onvoltageand fastswitching.

These devices have integrated protectionagainst
excessivevoltagesuchaselectrostaticdischarges.

ABSOLUTE RATINGS(limitingvalues)

BAT 48

DO 35

(Glass)

Symbol Parameter BAT47 BAT48 Unit

V

RRM

I

F

I

FRM

I

FSM

P

tot

T

stg

T

j

T

L

Repetitive Peak Reverse Voltage 20 40 V
Forward Continuous Current*
Repetitive Peak Fordward Current* t

Surge non Repetitive Forward Current* tp= 10ms 7.5 A

Power Dissipation* Ta=25°C 330 mW
Storage andJunction TemperatureRange - 65 to + 150

Maximum Temperature for Soldering during 10s at 4mmfrom
Case

=25°C

T

a

1s

≤

p

δ ≤ 0.5

tp= 1s 1.5

350 mA

1A

- 65to + 125
230

THERMALRESISTANCE

Symbol Test Conditions Value Unit

R

th(j-l)

* On infinite heatsink with 4mm lead length

Junction-ambient* 300 °

C

°
°C

°C

C/W

August 1999 Ed: 1A

1/5

BAT47/BAT48

ELECTRICALCHARACTERISTICS

STATIC CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

V

(BR)

V

*

F

IR=10µA
I

R

T
Tj=25°CIF= 1mA
T
T
T
T
T
Tj=25°CIF= 200mA 0.75
T

*T

I

R

T
T
T
T
T
T
T
T
T
Tj=25°C
T

=25µA
=25°CIF= 0.1mA

j

=25°CIF= 10mA

j

=25°CIF= 30mA

j

=25°CIF= 150mA

j

=25°CIF= 300mA

j

=25°CIF= 50mA

j

=25°CIF= 500mA 0.9

j

=25°CV

j

=60°C 10

j

=25°C

j

=60°C

j

=25°C

j

=60°C

j

=25°C

j

=60°C

j

=25°C

j

=60°C

j

=60°C

j

= 1.5V All Types 1

R

V

= 10V BAT47 4

R

V

= 20V 10

R

V

= 10V BAT48 2

R

V

= 20V 5

R

V

= 40V 25

R

BAT47 20 V
BAT48 40
All Types 0.25 V

0.3

0.4

BAT47 0.5

0.8
1

BAT48 0.5

20

30

15

25

50

A

µ

DYNAMICCHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

C

t

rr

* Pulsetest: tp≤ 300µs δ< 2%.

Tj=25°CVR=0V

=25°CVR=1V

T

j

Tj=25°CIF= 10mA VR=1V irr= 1mA RL= 100Ω

2/5

f = 1MHz 20 pF

12
10 ns

BAT 47/BAT48

Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).

Figure 2. Forward current versus forward
voltage (typical values).

Figure 3. Reverse current versus junction
temperature.

Figure 4. Reverse currentversus continuous
reverse voltage (typical values).

3/5

BAT47/BAT48

Figure 5. Capacitance C versus reverse

4/5

PACKAGE MECHANICALDATA

DO 35 Glass

BA B

note 1

E

O/O/

DD

note 2

Cooling method: by convection and conduction.
Marking: clear,ring atcathode end.
Weight: 0.015g

note 1

E

/

C

O

REF.

A 3.05 4.50 0.120 0.177

B 1.53 2.00 0.060 0.079
C 12.7 0.500
D 0.458 0.558 0.018 0.022

BAT 47/BAT48

DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

Informationfurnished is believed to be accurateand reliable. However,STMicroelectronics assumes no responsibility forthe consequencesof
use of such informationnor for any infringementof patentsor otherrights of thirdparties which may resultfrom its use. No license is granted
by implication or otherwise under any patentor patent rights of STMicroelectronics. Specificationsmentioned inthis publication are subjectto
change withoutnotice. This publication supersedes and replaces all informationpreviously supplied.
STMicroelectronicsproductsare not authorizedforuse as critical componentsinlifesupportdevices or systemswithoutexpress writtenapproval
of STMicroelectronics.

The ST logo is a registeredtrademark of STMicroelectronics

 1999 STMicroelectronics - Printedin Italy -All rights reserved.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia

Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

http://www.st.com

5/5