SGS Thomson Microelectronics BAT46W, BAT46SW, BAT46J, BAT46CW, BAT46AW Datasheet
BAT46J / BAT46W
BAT46AW /BAT46CW / BAT46SW
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
VERYSMALLCONDUCTIONLOSSES
NEGLIGIBLESWITCHINGLOSSES
LOWFORWARDVOLTAGEDROP
SURFACEMOUNTDEVICE
DESCRIPTION
High voltage schottkyrectifiersuited for SLIC protectionduringthecardinsertionoperation.
K
BAT46W
K
BAT46CW
K
A
NC
A
A
K2
K1
K1
A
K2
BAT46AW
A1
A1
A1
A2
K
A2
K2
A2
K1
A1
K1
K2
A2
BAT46SW
SOT-323
46
A
K
BAT46J
SOD-323
ABSOLUTE RATINGS
(limitingvalues)
Symbol Parameter Value Unit
V
RRM
P
T
Repetitivepeak reversevoltage 100 V
Continuousforwardcurrent 150 mA
I
F
Powerdissipation(note 1)
tot
Tamb= 25°C
Maximumstoragetemperaturerange - 65 to +150
stg
SOD-323 230 mW
SOT-323
°
Tj Maximumoperatingjunction temperature* 150 °C
T
Note 1:
dPtot
*:
Maximumtemperaturefor solderingduring 10s 260 °C
L
fordouble diodes, Ptot is the total dissipation of the both diodes.
1
dTj
<
Rth(j−a
thermal runawayconditionfor adiodeon its own heatsink
)
C
June 1999 - Ed: 2A
1/5
BAT46J/ BAT46W / BAT46AW / BAT46CW / BAT46SW
THERMALRESISTANCE
Symbol Parameters Value Unit
R
th (j-a)
Junctionto ambient(*) SOD-323 550
SOT-323 °C/W
(*)Mounted on epoxy board, with recommended pad layout.
STATICELECTRICALCHARACTERISTICS
Symbol Testconditions Min. Typ. Max. Unit
V
BR
V
F
I
R
Tj=25°CI
* Tj=25°CI
Tj=25°CI
Tj=25°CI
** Tj= 25 °CV
= 100µA 100 V
R
= 0.1 mA 0.25 V
F
= 10 mA 0.45
F
= 250mA 1
F
=1.5 V 0.5 µA
R
Tj=60°C5
Tj=25°CV
=10 V 0.8
R
Tj=60°C 7.5
Tj=25°CV
=50V 2
R
Tj=60°C15
Tj=25°CV
=75V 5
R
Tj=60°C20
Pulse test : * tp=380µsδ<2%
** tp = 5ms, δ <2%
°
C/W
DYNAMICCHARACTERISTICS
Symbol Testconditions Min. Typ. Max. Unit
C Tj=25°CV
Tj=25°CV
2/5
= 0 V F = 1MHz 10 pF
R
=1V 6
R
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