SGS Thomson Microelectronics BAT45 Datasheet
SMALLSIGNALSCHOTTKY DIODE
DESCRIPTION
Metaltosilicon junction diodeprimarly intendedfor
UHF mixers and ultrafast switchingapplications.
ABSOLUTE RATINGS (limiting values)
BAT 45
DO 35
(Glass)
Symbol Parameter Value Unit
V
RRM
I
F
I
FSM
T
stg
T
T
L
Repetitive Peak Reverse Voltage 15 V
Forward ContinuousCurrent Ta=25°C30mA
Surge non Repetitive Forward Current tp ≤ 1s 60 mA
Storage andJunction TemperatureRange - 65 to +150
j
Maximum Temperature for Soldering during 10s at 4mmfrom
Case
- 65 to +125
230
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
* On infinite heatsink with 4mm lead length
Junction-ambient* 400 °
°C
°C
°C
C/W
November 1994
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BAT45
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol TestConditions Min. Typ. Max. Unit
V
BR
VF(1)
IR(1)
T
=25°CI
amb
=25°CI
T
amb
=25°CI
T
amb
=25°CI
T
amb
=25°CV
T
amb
R
F
F
F
=10µA
= 1mA
= 10mA
= 30mA
=6V
R
DYNAMICCHARACTERISTICS
Symbol TestConditions Min. Typ. Max. Unit
CT
τ
F (2) T
(1) Pulse test: tp≤ 300µs δ< 2%.
(2) Noise figure test :
- diode isinserted in a tunedstripline circuit
- local oscillator frequency 1GHz
- local oscillator power 1mW
- intermediate frequencyamplifier, tunedon 300MHz, has a noise figure1.5dB
Matched batches available onrequest. Test conditions (forward voltage and/or capacitance) according to customerspecification.
=25°CV
amb
=25°CI
T
amb
=25°C f =1GHz 6 7 dB
amb
= 1V f = 1MHz 1.1 pF
R
= 20mA Krakauer Method
F
15 V
0.38 V
0.5
1
0.1
100 ps
µA
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